The nonlocal electron transport in transistor structures with submicron surface relief

For a field effect transistor with its gate placed in submicron recess, the parameters of nonlocal electron heating were investigated as function of the recess depth and the gate position. It is shown that the recessing can really change the properties of electron transport. Even in structures without gate and with 1.5 /spl mu/m recess maximum drift velocity is about one and half time greater than the steady-state drift velocity in strong field. The recess leads to changes in device drift velocity and electric field distributions, so the static domain displaced from the gate not to the drain contact but to the drain edge of recess when the gate is open without changing its shape.