High-speed InP-based resonant tunneling diode on silicon substrate

A technology for high speed and high performance III-V semiconductor devices on silicon substrate has been developed. It consists of an InP-on-Si quasi-substrate exhibiting an XRD FWHM as low as 86 arcsec, followed by a low-temperature (370/spl deg/C) grown InAlAs layer. The surface roughness is reduced to 1.9 nm along with an almost complete elimination of surface defects. The applicability is experimentally verified for InP-based resonant tunneling diodes exhibiting a speed index of 32 ps/V indicating a potentially low-cost technology for high functionality circuits operating above 10 Gb/s.