Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500/spl deg/C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300/spl deg/C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.