Investigation of microplasmas in InP avalanche photodiodes

The electron beam induced current technique has been used to investigate microplasmas in InP avalanche photodiodes. It is shown that microplasmas develop along growth induced doping striations. Edge and bulk microplasmas have been detected, the latter only originating at recombination centers. Leakage currents of 15 nA at 0.9 V
B
and dc avalanche gains >10
³
have been observed in the best devices.