A 1 µm Mo-gate 64-Kbit MOS RAM

New double-layer technology using molybdenum and polysilicon gate(Mo-poly technology) is proposed. Molybdenum and polysilicon were used for word lines and gates of storage capacitors, respectively. The propagation delay in a word line becomes extremely small and cell size is reduced to 8 µm × 8 µm. A 64-Kbit MOS RAM, designed by Mo-poly technology, was experimentally fabricated by 1 µm process technologies.