Ion-implanted planar-mesa IMPATT diodes for millimeter wavelengths

A process has been developed that combines ion-implantation doping with planar and mesa-etching techniques for the fabrication of fully passivated millimeter-wave IMPATT diodes. The device geometry consists of an IMPATT diode surrounded by a two-layer annular region of passivation: one layer of high-resistivity semiconductor and the other of thick insulator material. Devices constructed with this new geometry have sufficient mechanical strength to allow direct mounting into microwave circuits without the use of an insulator standoff and metal ribbon package arrangement. A simple model of the diode-circuit interaction is used to estimate the degradation in microwave performance as a function of the passivation parasitics. These results are compared to a diode with no parasitic losses. Based on the I
²
-PLASA process, a fully passivated silicon IMPATT diode was fabricated for V-band (50-75-GHz) operation. Degradation factors of approximately 50 percent are predicted for the present devices. A continuous-wave output power of 100 mW was obtained at 62 GHz from an I
²
-PLASA IMPATT diode with an implanted p
⁺
-n-n
⁺
doping profile. Mechanical tuning characteristics of these devices were found to be more broad-band than standard packaged diodes. The measured AM and FM noise spectra close to the carrier were representative of standard single-drift silicon millimeter-wave IMPATT diodes.