Optimization of avalanche silicon photodiodes: A new structure

This paper describes a new type of reach through silicon avalanche photodiode having a special impurity profile in the multiplying region. A low-high-low structure is proposed in which generation and multiplication regions are separated. So, a finite avalanche width where the electric field is nearly constant is obtained by a buried P type layer. This new structure allows high multiplication factor with lower avalanche field than in N
⁺
P π P
⁺
diodes.