A new small signal modeling of RF MOSFETs including charge conservation capacitances

A novel extraction method of high frequency small-signal model parameters for MOSFETs is proposed. From S-parameter measurement, this technique accurately extracts the model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled parameters fit the measurements very well without any optimization. The extracted parameters also match very well with BSIM3v3 model.