Study of n-channel MOSFETs with an enclosed-gate layout in a 0.18 micron CMOS technology

Enclosed-gate layout MOSFETs with guard rings have been fabricated in a commercial 0.18 micron CMOS technology. The static, signal, and noise performance of the MOSFETs were determined before and after being subjected to ionizing radiation. The transistor design could provide the basis for low-noise radiation-tolerant circuits.