Low noise, and high gain wideband amplifier using SiGe HBT technology

A low noise wideband amplifier using SiGe HBT technology for the receiver system-on-a-chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of 5 dB, and output third-order intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence's Spectre's simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier's measured and simulated results.