Improvement of the high-temperature characteristics of 1.52 /spl mu/m InGaAs laser with (InAlAs)/sub 0.4/(InGaAs)/sub 0.6/ short-period superlattice barriers

A high-temperature characteristics of 1.52 /spl mu/m InGaAs ridge waveguide laser diode (LD) with InGaAs/InAlAs short period superlattices (SPSs) barriers is reported. The SPSs are grown by digital-alloy molecular beam epitaxy (MBE). There have been similar studies at the 0.98 /spl mu/m LD using GaAs/AlGaAs SPSs barrier (T/sub 0/=300 K) and 1.3 /spl mu/m InGaAsP LD using (InGaAsP)/sub 4//(InP)/sub 5/ SPSs barrier (T/sub 0/=90 K). On the basis of above context, It is reasonable to adapt SPSs to InGaAlAs/InGa(Al)As system. In this letter, a high-temperature characteristics of 1.52 /spl mu/m InGaAs LD with (InAlAs)/sub 0.4/(InGaAs)/sub 0.6/ SPSs barriers grown by digital alloy MBE technique is reported for the first time.