RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90 nm RFCMOS

An in-depth analysis of the impact of hot-carrier stress (HCS) and oxide breakdown on 90 nm RFCMOS at low power bias is presented. Analog devices are found to be highly vulnerable to HCS under this condition. The post-breakdown MOSFET RF characteristics are completely explained by considering the location and the resistor-like behavior of the breakdown path.