Technological aspects of manufacturing planar microwave diodes with Au-Ti(ZrB/sub x/)-n-n/sup +/ 4HSiC schottky barrier

The parameters of planar diodes with Au-ZrB/sub x/-n-n/sup +/4HSiC Schottky barrier have been studied both before and after rapid thermal annealing (RTA) at T=1000/spl deg/C. A possibility to produce high-voltage diode structures that remain serviceable after the RTA at T=1000/spl deg/C is demonstrated.