A Refractory Self-Aligned Gate Process for Monolithically Combined Microwave and Digital GaAs ICs

We present a process for monolithically fabricating microwave and DCFL digital GaAs circuits. The process employs refractory metal SAG FETs with techniques to provide low gate resistance and high output resistance and break-down voltage. Using a 1.0 µm gate length, 1.5 dB noise figure with 10.2 dB associated gain at 10 GHz analog performance and 65 ps typical propagation delay at 0.5 mW/gate (fan-in/fan-out = 2/2) DCFL digital performance have been obtained.