Thin film CdTe homojunctions by MOCVD (solar cells)

Polycrystalline solar cell thin-films of cadmium telluride (CdTe) have been deposited on glass and SnO/sub 2/:F/glass substrates at 350 degrees -400 degrees C by the reaction of dimethylcadmium (DMCd) and diisopropyltellurium (DIPTe) in a hydrogen atmosphere. The DMCd/DIPTe molar ratio in the reaction mixture is an important factor, affecting the deposition rate, conductivity type, and the incorporation of dopants. The deposited films are p-type at a DMCd/DIPTe molar ratio of 0.6 or less and are n-type at higher ratios. Extrinsically doped CdTe films have been deposited for the first time by using ethyldimethylindium and arsine as the n- and p-type dopant, respectively. The electrical properties of undoped and doped CdTe films have been characterized. Thin-film CdTe homojunctions have been prepared by the successive in-situ deposition of extrinsically doped n- and p-CdTe films on SnO/sub 2/:F/glass substrates and their properties investigated.<
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