Photoresponse characteristics of thin-film nickel-nickel oxide-nickel tunneling junctions

Photoinduced tunneling currents in thin-film Ni-NiO-Ni tunneling junctions were measured as a function of photon energy over the range 2.0 eV
\leq hf \leq 2.7
eV. The photoresponse mechanism was found to be consistent with a photon assisted tunneling mechanism. Inelastic electron-electron collisions were found to strongly influence the photoassisted tunneling currents.