Model of magnetically enhanced, capacitive RF discharges

Magnetically enhanced, capacitive RF discharges (called RF magnetrons or MERIE discharges) are playing an increasing role in thin film etching for integrated circuit processing. In these discharges, a weak DC magnetic field is imposed, lying parallel to the powered electrode surface. The authors determine the RF power transferred to the discharge electrons by the oscillating electron sheath in the presence of the magnetic field. Using this, along with particle and energy conservation, they obtain discharge parameters such as the ion flux and ion bombarding energy at the powered electrode as functions of pressure, RF power, and the magnetic field. Some results of the model show good agreement with experiments done on a commercial MERIE system.<
>