A monolithically integrated detector-preamplifier on high-resistivity silicon

A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated, and characterized. The detector is a fully depleted p-i-n diode, and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated, and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/ square root Hz in the white-noise regime. Measurements with an Am/sup 241/ radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm/sup 2/ detector with on-chip amplifier in an experimental setup with substantial external pickup.<
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