Radiation effects on the SVX silicon strip readout chip

A study of radiation effects on early versions of the SVX silicon strip readout device is reported. Test structures and full operating readout chips were exposed to cobalt-60 gamma radiation and neutrons. Transistor threshold shifts and input noise density as a function of radiation are reported. Equivalent input noise as a function of radiation is also presented. In order to show the environment in which the SVX chip will operate and help interpret the radiation test results, measurements of radiation levels inside the Fermilab Colliding Detector Facility (CDF) were made. These results are reported for the last CDF run. The cobalt-60 measurements show that the SVXC devices are made with a process which is relatively soft.<
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