Characterization of microtrenching on 0.13/spl mu/m NMOS and PMOS transistors using DAHC and edge FN stress

The degradation of 0.13/spl mu/m NMOS and PMOS transistors caused by microtrenching (/spl mu/T) under hot-carrier and edge FN stress is studied. DAHC stress was found to be a sensitive technique for characterizing the NMOS transistors while edge FN stress was more suitable for the PMOS transistors. Interface state generation was also identified as the dominant degradation mechanism.