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A Bluetooth radio in 0.18-μm CMOS
van Zeijl, P.; Eikenbroek, J.-W.T.; Vervoort, P.-P.; Setty, S.; Tangenherg, J.; Shipton, G.; Kooistra, E.; Keekstra, I.C.; Belot, D.; Visser, K.; Bosma, E.; Blaakmeer, S.C.;
Solid-State Circuits, IEEE Journal of
Volume 37,
Issue 12,
Dec. 2002
Page(s):1679
-
1687
Abstract:
This paper describes the results of an implementation of a Bluetooth radio in a 0.18-μm CMOS process. A low-IF image-reject conversion architecture is used for the receiver. The transmitter uses direct IQ-upconversion. The VCO runs at 4.8-5.0 GHz, thus facilitating the generation of 0° and 90° signals for both the receiver and transmitter. By using an inductor-less LNA and the extensive use of mismatch simulations, the smallest silicon area for a Bluetooth radio implementation so far can be reached: 5.5 mm2. The transceiver consumes 30 mA in receive mode and 35 mA in transmit mode from a 2.5 to 3.0-V power supply. As the radio operates on the same die as baseband and SW, the crosstalk-on-silicon is an important issue. This crosstalk problem was taken into consideration from the start of the project. Sensitivity was measured at -82 dBm.
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