Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic
Skip to Results

Search Results

You searched for: barnett gallium phosphide cell
You Refined by
Publication Year: 2012 - 2012 Remove
1 Results returned
Skip to Results
  • Save this Search
  • Download Citations Disabled
  • Save To Project
  • Email
  • Print
  • Export Results
  • Full text access may be available. Click article title to sign in or learn about subscription options.

    Wide Band Gap Gallium Phosphide Solar Cells

    Xuesong Lu ; Huang, S. ; Diaz, M.B. ; Kotulak, N. ; Ruiying Hao ; Opila, R. ; Barnett, A.
    Photovoltaics, IEEE Journal of

    Volume: 2 , Issue: 2
    DOI: 10.1109/JPHOTOV.2011.2182180
    Publication Year: 2012 , Page(s): 214 - 220
    Cited by:  Papers (3)

    IEEE Journals & Magazines

    Gallium phosphide (GaP), with its wide band gap of 2.26 eV, is a good candidate for the top junction solar cell in a multijunction solar cell system. Here, we design, fabricate, characterize, and analyze GaP solar cells. Liquid phase epitaxy is used to grow the semiconductor layers. Four generations of GaP solar cells are developed and fabricated with each solar cell structure being designed and improved based on the first principles analyses of the predecessor solar cells. Quantum efficiency and current-voltage measurements are used to analyze the solar cell performance and to develop predictive models. We create a GaP solar cell with an efficiency of 2.42% under AM 1.5G one sun illumination. View full abstract»

Skip to Results


Search History is available using your personal IEEE account.