Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node
Luisier, M.
Klimeck, G.
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN
This paper appears in: Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on Publication Date: 9-11 Sept. 2008
On page(s):
17
- 20
Location: Hakone
ISBN: 978-1-4244-1753-7
Digital Object Identifier: 10.1109/SISPAD.2008.4648226
Current Version Published: 2008-10-10
Abstract
Physics-based simulations are widely recognized as an helpful support to develop novel transistor structures. In this paper we describe a two-dimensional full-band and atomistic simulator. The sp3d5s* tight-binding model is used as bandstructure model. Our tool allows the treatment of realistically extended n- and p-doped double-gate field-effect transistors. The devices are designed according to the ITRS specifications for the 22 nm technology node. Different crystal and surface orientations are investigated and compared to the ITRS targets. The importance of including spin-orbit coupling in the bandstructure model is discussed for p-doped FETs.
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