OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices
Luisier, M.
Klimeck, G.
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN
This paper appears in: Nanotechnology, 2008. NANO '08. 8th IEEE Conference on Publication Date: 18-21 Aug. 2008
On page(s):
354
- 357
Location: Arlington, TX
ISBN: 978-1-4244-2103-9
Digital Object Identifier: 10.1109/NANO.2008.110
Current Version Published: 2008-09-03
Abstract
The technology computer aided design of nanometer-scaled semiconductor devices requires appropriate quantum-mechanical models that capture the atomic granularity of the simulation domain. The recently developed nanodevice simulator OMEN fulfills this condition. It is able to treat two- and three-dimensional transistor structures in a full-band framework using the semi-empirical sp3d5 s* tight-binding model. In this formalism each atom of the device is represented by a set of ten orbitals leading to multi-band and open-boundary Schrodinger equations that have to be solved thousands of times. To improve its computational efficiency OMEN has four levels of parallelism that make it run on the largest available supercomputers.
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