Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]
Fiori, G.
Iannaccone, G.
Klimeck, G.
This paper appears in: Electron Devices, IEEE Transactions on Publication Date: April 2008
Volume: 55
,
Issue: 4
On page(s):
1094
- 1095
Location: Lausanne, Switzerland
ISSN: 0018-9383
Digital Object Identifier: 10.1109/TED.2008.917329
Current Version Published: 2008-03-21
Abstract
In the above titled paper (ibid., vol. 53, no. 8, pp. 1782-1788, Aug 06), there are some errors in the results. This errata corrects Figs. 5-11, and 13 of the original paper and adds Fig. 14.
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