An Approach to Cost-Effective, Robust, Large-Area Electronics using Monolithic Silicon
Kevin Huang
Dinyari, R.
Lanzara, G.
Jong Yon Kim
Jianmin Feng
Vancura, C.
Fu-Kuo Chang
Peumans, P.
Stanford Univ., Palo Alto
This paper appears in: Electron Devices Meeting, 2007. IEDM 2007. IEEE International Publication Date: 10-12 Dec. 2007
On page(s):
217
- 220
Location: Washington, DC
ISBN: 978-1-4244-1507-6
Digital Object Identifier: 10.1109/IEDM.2007.4418906
Current Version Published: 2008-01-04
Abstract
We have developed an approach to build large-area electronics from monolithic silicon integrated circuits. The method used deep reactive ion etching to structure a monolithic silicon substrate into a stretchable, two-dimensional, wired network that can be expanded to cover large planar or curved surfaces to realize high-performance, large-area, monolithic silicon electronics in a cost-effective manner. This approach has applications in sensing, smart materials, electronic textile,RFID tag and microconcentrator solar cell manufacturing.
Index
Terms
Available to subscribers and IEEE members.
References
Available to subscribers and IEEE members.
Citing Documents
Available to subscribers and IEEE members.
You are not
logged in.
Guests
may access Abstract records free of charge.
Cart
