http://ieeexplore.ieee.org TOC Alert for Publication# 7729 2013 May 21 12 3 C1 C1 200 12 3 C2 C2 137 12 3 277 278 138 $D_{{rm it}}$ could be extracted with the quasi-static method. Although the capacitance of a single nanowire MOS capacitor with Al$_2$ O$_3$ gate oxide is only 2 fF, $D_{{rm it}}$ values were obtained with good reproducibility. For etched, vertical Si nanowires, $D_{{rm it}}$ in the range of $(4 pm 1) times 10^{12},rm {cm^{-2}eV^{-1}}$ was obtained.]]> 12 3 279 282 441 $hbox{%}$ reduction in power-delay product for nine-trit adders in comparison to a direct realization.]]> 12 3 283 287 920 12 3 288 295 493 $_{2}$ were used as a gate dielectric layer. Unfortunately, there are reliability concerns in ZnO devices, such as aging and hysteresis. In this study, an experimental investigation of the hysteresis in the transfer characteristic is performed. It was observed that the hysteresis direction is affected by temperature variation when the polymeric dielectric is used. The PVP bulk polarization, the traps in nanoparticles and at the polymeric dielectric interface, as well as the desorption of oxygen molecules in the surface of the nanoparticles, were attributed as the main cause of the hysteretic behavior.]]> 12 3 296 303 1310 12 3 304 308 339 12 3 309 313 490 $_{2}$O $_{4}$ (M = Mg, Ni, Co; mean diameter size $d$ = 30–35 nm) and superparamagnetic MFe $_{2}$O$_{4}$ (M = Mg, Ni, Mn$_{0.5}$Zn $_{0.5}$; $d$ = 6–8 nm) nanoparticles [ferromagnetic nanoparticles (FMNPs) and superparamagnetic nanoparticles (SPNPs)] were used to explore the physical mechanisms of ac magnetically induced heating and identify what physical parameters would be the most critical to enhance the ac magnetically induced heating power for local in vivo hyperthermia agent applications. It was experimentally confirmed that “dc (minor) hysteresis loss power” generated by the magnetization reversal process, and “Néel relaxation loss power” generated by fluctuation of the magnetic moment dominantly contribute to the ac heat generation of FMNPs and SPNPs, respectively. In addition, all the experimentally and physically analyzed results demonstrated that the improvement of in-phase magnetic susceptibility $chi^prime _m$ is directly relevant to the “dc (minor) hysteresis loss power” as well as the dc magnetic softness, and the out-of-phase magnetic susceptibility $chi^{prime prime} _m$ is directly relevant to the “Néel relaxation l- ss power (or ac magnetic hysteresis loss power, A )” as well as the ac magnetic softness are the most crucial physical parameters responsible for enhancing the ac magnetically induced heating power of solid-state FMNPs and SPNPs, respectively. Particularly, some technical and engineering approaches, which can improve the $chi^prime _m$ of FMNPs and the $chi^{prime prime} _m$ of SPNPs, were proposed and introduced in this study to provide crucial information how to effectively design and develop a new promising hyperthermia agent in nanomedicine.]]> 12 3 314 322 1177 12 3 323 329 652 12 3 330 339 721 12 3 340 351 1783 12 3 352 360 1093 12 3 361 367 689 $dc$ up to 20. The CN is constructed using a VHDL behavioral model of QCA elementary circuits which provides a hierarchical bottom up approach to evaluate the logical behavior, area, and power dissipation of the whole design. Performance evaluations are reported for the two main implementations of QCA i.e. molecular and magnetic.]]> 12 3 368 377 1096 $hbox{it z}$-dependent characteristic length, and the position of minimum center potential in the channel is obtained by virtual cathode position. A model is proposed for threshold voltage, based on shifting of the inversion charge from center line to silicon–insulator interface.]]> 12 3 378 385 1365 , . This paper presents various sequential circuit topologies using NEM relays and analyzes their power, performance, and area tradeoffs. The mechanical delay is inversely proportional to the gate-base voltage $V_{gb}$. This paper also presents an integrated voltage doubler-based flip-flop that improves the performance by 2$times$ by overdriving $V_{gb}$. An electromechanical model which accounts for the mechanical, electrical, and dispersion effects of the suspended gate relay operating at 1 V with a nominal air gap of 5–10 nm has been developed based on published fabrication results in . Three sequential logic benchmark circuits were designed using NEM relays to verify the correctness of operation of the proposed circuits. This study explores different relay-based latch and flip-flop topologies, proposes fast sequential circuits that can operate at a frequency of $1/2t_{m}$ (theoretical fastest frequency for NEM relay logic circuits) and further improves speed of sequential circuits by distributed charge boosting.]]> 12 3 386 398 2553 12 3 399 407 851 $^{2}$. The capacities of the batteries made with the current collectors are 150 mAh/g for lithium cobalt oxide (LCO) half-cell, 158 mAh/g for lithium titanium oxide (LTO) half-cell, and 126 mAh/g for LTO/LCO full-cell. The fabrication approach of the CNT-microfiber paper current collectors, the assembly of the batteries, and the experimental results are presented and discussed.]]> 12 3 408 412 650 12 3 413 426 928 $10%$ .]]> 12 3 427 435 609 $_{3}$N$_{4}$, Ge $_{3}$N$_4$ formed by NH $_{3}$ plasma nitridation of an amorphous Ge film was explored in this study as the charge-trapping layer for flash memory devices. As the nitridation time prolongs, memory window and operation speed are improved accordingly. The improvement is inferred to be the increased number of trapping sites and higher permittivity of the charge-trapping layer caused by the introduction of nitrogen atoms. The former is helpful in storing more charges while the latter offers a higher electric field over the tunnel oxide. Memory devices with 180-s NH$_{3}$ plasma nitridation hold great potential for advanced memory applications because they possess many promising characteristics such as a large hysteresis memory window, high operation speed, robust endurance performance up to 10$^{5}$ program/erase (P/E) cycles, and good retention characteristic with 15% charge loss after 10-year operation at 85 °C.]]> 12 3 436 441 648 12 3 442 449 2906 12 3 450 459 820 12 3 460 471 1418 12 3 472 472 304 12 3 C3 C3 101 12 3 C4 C4 5