http://ieeexplore.ieee.org TOC Alert for Publication# 7729 2012 February 10 11 1 C1 C1 196 11 1 C2 C2 40 11 1 1 2 189 11 1 3 7 681 2)-based resistive RAM (ReRAM) cointegration with 380 μm-height Cu through-silicon via (TSV) arrays for programmable 3-D interconnects. Nonvolatile resistive switching of Pt/TiO₂ /Pt thin films is first characterized with a resistance ratio up to five orders of magnitude. Then, cointegration of Pt/TiO₂/Pt or Pt/TiO₂ memory cells on 140 and 60 μm diameter Cu TSVs is fabricated. Repeatable nonvolatile bipolar switching of the ReRAM cells is demonstrated for different structures.]]> 11 1 8 11 335 3 substrates is reported. The calculated barrier height and ideality factors are compared for dopant concentrations ranging over three orders of magnitude. The results show that the lowest doped substrates exhibit transport characteristics dominated by thermionic emission while the highest doped substrates are dominated by tunneling and the transition is best described by classical theory with the addition of edge effects to account for nonideal behavior.]]> 11 1 12 15 281 11 1 16 20 488 11 1 21 33 1240 11 1 34 43 721 11 1 44 50 1118 11 1 51 55 553 11 1 56 62 947 11 1 63 70 1282 1] and bilayer [(ZnO)₂] systems. Due to the 2-D quantum confinement effects, in those Mn-doped (ZnO)₁ and (ZnO)₂ structures, the antiferromagnetic (AFM) coupling between (nearest neighbor) Mn_Zn impurities have been strengthened when compared with the one in ZnO bulk systems. On the other hand, we find that the magnetic state of these systems can be tuned from AFM to FM by adding holes, which can be supplied by a p-type doping or even photoionization processes. Whereas, upon addition of electrons (n-type doping), the system keeps its AFM configuration.]]> 11 1 71 76 547 11 1 77 81 323 11 1 82 87 818 2O₃) cores, yielding 25-100-nm diameter nanoparticles that were structurally characterized by transmission electron microscopy and electron diffraction. The EAM nanoparticles were coated with monoclonal antibodies specific to H5N1 (A/Vietnam/1203/04). Specificity of binding between glycans and H5 was demonstrated. The biosensor results were correlative to supporting data from a surface plasmon resonance assay that characterized HA/glycan binding and α-H5 antibody activity. This novel study applies EAM nanoparticles as the transducer in a specific, portable, easy-to-use biosensor with great potential for disease monitoring and biosecurity applications.]]> 11 1 88 96 1287 11 1 97 104 624 11 1 105 119 2395 11 1 120 126 625 2O/ZnO nanowire photodiode, Cu₄O₃/ZnO nanowire photodiode and CuO/ZnO nanowire photodiode by simply changing the O flow rate during deposition. It was also found that noise equivalent powers were 6.1 × 10^-11, 3.8 × 10^-10, and 7.2 × 10^-8 W while normalized detectivities were 6.35 × 10⁹, 1.02 × 10⁹, and 5.37 × 10⁶ cmHz^0.5 W^-1 for the fabricated Cu₂O/ZnO nanowire photodiode, Cu₄O₃ /ZnO nanowire photodiode and CuO/ZnO nanowire photodiode, respectively.]]> 11 1 127 133 804 11 1 134 138 734 11 1 139 147 1071 11 1 148 151 516 11 1 152 159 571 6 were obtained compared to 219 and 2.06 × 10⁶ for an identical device prepared at 26°C, respectively. Magnetocurrent effect of ~28% was obtained with applied 2 T and 110°C.]]> 11 1 160 163 289 FB and the charge density Q_nc are greatly dependent on the start sweep gate voltage V_G and the sweep rate dV/dt. The large memory window reveals the high carrier injection efficiency for both electrons and holes, and it increases steadily from 0.86 to 8.30 V with the increase of the start applied gate voltage from ±2 to ± 6 V. When the sweep rate is slow enough, the flat-band voltage shift and the stored charges will reach a saturation state. Hence, the simulation C-V characteristics of metal NC memory may guide the devices design or to predict their performances.]]> 11 1 164 171 777 11 1 172 181 1090 11 1 182 193 1983 11 1 194 199 579 11 1 200 207 520 11 1 208 212 521 11 1 C3 C3 35 11 1 C4 C4 5