<![CDATA[ Device and Materials Reliability, IEEE Transactions on - new TOC ]]> http://ieeexplore.ieee.org TOC Alert for Publication# 7298 2012 February 10 <![CDATA[Front cover]]> 11 4 C1 C1 97 <![CDATA[IEEE Transactions on Device and Materials Reliability publication information]]> 11 4 C2 C2 36 <![CDATA[Table of Contents]]> 11 4 505 505 42 <![CDATA[What is in a Page Charge?]]> 11 4 506 506 17 <![CDATA[Editorial Kudos to Our Reviewers]]> 11 4 507 507 16 <![CDATA[Introduction to the Special Section on Electrostatic Discharge: From Transistor Technology to Chip Level to System Level]]> 11 4 508 508 17 <![CDATA[Triggering of Transient Latch-up by System-Level ESD]]> 11 4 509 515 688 <![CDATA[ESD Engineering Fully Silicided Large MOSFET Driver for Maximum <formula formulatype="inline"> <img src="/images/tex/20036.gif" alt="It\hbox {1}"> </formula> Performance]]> 11 4 516 521 594 <![CDATA[Comparison of Wafer-Level With Package-Level CDM Stress Facilitated by Real-Time Probing]]> 11 4 522 530 886 <![CDATA[Temperature Cycling Reliability of High-Temperature Lead-Free Die-Attach Technologies]]> 11 4 531 539 981 <![CDATA[The Effects of Al Doping and Metallic-Cap Layers on Electromigration Transport Mechanisms in Copper Nanowires]]> 11 4 540 547 397 <![CDATA[Defect Analysis on Optical Waveguide Arrays by Synchrotron Radiation Microtomography]]> 11 4 548 550 255 <![CDATA[Neutron-Induced Charge Collection Simulation of Bulk FinFET SRAMs Compared With Conventional Planar SRAMs]]> 11 4 551 554 560 <![CDATA[Thirteenth IEEE International Vacuum Electronics Conference and Ninth IEEE International Vacuum Electron Sources Conference]]> 11 4 555 555 1015 <![CDATA[2012 19th international workshop on active matrix flatpanel displays and devices]]> 11 4 556 556 1260 <![CDATA[2011 Index IEEE Transactions on Device and Materials Reliability Vol. 11]]> 11 4 557 569 143 <![CDATA[IEEE Transactions on Device and Materials Reliability information for authors]]> 11 4 C3 C3 29 <![CDATA[Blank page [back cover]]]> 11 4 C4 C4 5