<![CDATA[ IEEE Microwave and Wireless Components Letters - new TOC ]]>
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TOC Alert for Publication# 7260 2017July 20<![CDATA[Table of contents]]>277C1C4207<![CDATA[IEEE Microwave and Wireless Components Letters publication information]]>277C2C2105<![CDATA[A Collocated 3-D HIE-FDTD Scheme With PML]]>277609611388<![CDATA[Miniaturized Quarter-Mode Substrate Integrated Cavity Resonators for Humidity Sensing]]>277612614769<![CDATA[Band-Selectively Tunable Electromagnetic Bandgap Structures With Open-Circuit Lines and Variable Capacitors]]>277615617855<![CDATA[Electrical Modeling and Analysis of Differential Dielectric-Cavity Through-Silicon via Array]]>277618620458<![CDATA[Air-to-Dielectric-Filled Two-Hole Substrate-Integrated Waveguide Directional Coupler]]>2776216231155<![CDATA[An Alternate Circuit for Narrow-Bandpass Elliptic Microstrip Filter Design]]>$\Delta {f}_{3~\mathrm {dB}}/\Delta {f}_{20~\mathrm {dB}}$ result is better than 0.583, which means the proposed filter has a good selectivity.]]>277624626535<![CDATA[Miniaturized Frequency Controllable Band-Stop Filter Using Coupled-Line Stub-Loaded Shorted SIR for Tri-Band Application]]>$\pi $ -type network combined with two loaded CLSLSSIRs and transmission line, multiple transmission poles can be yielded to obtain high selectivity of transition band. Finally, an example TB-BSF operating at 1.57, 2.4, and 3.5 GHz with respective SAs of 18, 26.5, and 33.2 dB has been designed and fabricated.]]>2776276291312<![CDATA[Compact Wideband Bandpass Filter for TETRA Band Applications]]>$0.127 \lambda _{g} \times 0.133 \lambda _{g}$ , providing −3 dB fractional bandwidth of 20.5% and wide stopband bandwidth from 0.42 to 1.55 GHz. The experimental results are in compliance with the simulated results, which show that the filter is viable for practical use.]]>277630632917<![CDATA[Two-Layered Substrate Integrated Waveguide Filter for UWB Applications]]>277633635992<![CDATA[Design of a Compact UWB Filter With High Selectivity and Superwide Stopband]]>277636638687<![CDATA[Absorptive Bandstop Filter With Prescribed Negative Group Delay and Bandwidth]]>2776396411209<![CDATA[Dual-Mode Filtering Power Divider With High Passband Selectivity and Wide Upper Stopband]]>$\lambda$ ) microstrip line, the dual-mode FPD is initially constructed by utilizing proper coupling topologies between the open-ended transmission line and two dual-mode resonators. Meanwhile, its good isolation performance is attained by introducing an isolation resistor between the two dual-mode resonators. Next, the explicit synthesis method is described to design the proposed FPD with prescribed performance. A prototype FPD at 2.4 GHz is in final implemented and measured. As theoretically expected, this proposed FPD exhibits better than 22-dB isolation within the entire operation band along with 17-dB harmonic suppression up to 7.5 GHz (3.1f_{0}).]]>277642644727<![CDATA[A Compact Balanced-to-Balanced Filtering Gysel Power Divider Using $\lambda _{g}$ /2 Resonators and Short-Stub-Loaded Resonator]]>$(Q_{e})$ . For the demonstration of the design method, an FPD operating at 2.405 GHz has been fabricated and measured. The measured results validate the design method.]]>277645647797<![CDATA[Analysis of 220-GHz Low-Loss Quasi-Elliptic Waveguide Bandpass Filter]]>2776486501278<![CDATA[A 220-GHz Compact Equivalent Circuit Model of CMOS Transistors]]>277651653914<![CDATA[A Millimeter-Wave CMOS Dual-Bandpass T/R Switch With Dual-Band LC Network]]>$\mu \text{m}$ SiGe BiCMOS process is presented. The developed T/R switch consists of dual-band LC networks and resonators with shunt nMOS transistors performing the switching function. In the receiving (RX) mode, the measured insertion losses (ILs) and isolations (ISOs) are 4.5 and 16 dB at 24 GHz, and 5 and 18.3 dB at 60 GHz, respectively. The ILs and ISOs for the transmitting (TX) mode are 6.7 and 18.2 dB at 24 GHz, and 8.5 and 20.8 dB at 60 GHz, respectively. The measured peak stopband rejections are 61.5 and 65.5 dB for the RX and TX modes, respectively. With single-tone 24 or 60 GHz input, the measured input 1-dB compression point ($P_{{{1~\text {dB}}}})$ is 23.3 or 18.4 dBm at 24 or 60 GHz, respectively. For concurrent dual-tone 24/60-GHz input, the measured inputs $P_{{{1~\text {dB}}}}$ are 19 and 16.8 dBm at 24 and 60 GHz, respectively. The measured input third-order intercept points are 31.5 and 27.9 dBm at 24 and 60 GHz, respectively.]]>277654656950<![CDATA[Compact Wideband LNA With Gain and Input Matching Bandwidth Extensions by Transformer]]>2, exhibiting as one of the most compact wideband LNAs.]]>277657659988<![CDATA[A 0.71-pJ/b ON-OFF Keying $K$ -Band Oscillator Using an InP-Based Resonant Tunneling Diode]]>277660662799<![CDATA[A Low-Loss Compact 60-GHz Phase Shifter in 65-nm CMOS]]>$\times0.22$ mm. To the best of our knowledge, this phase shifter achieves the lowest insertion loss and the smallest core area of all the published 60-GHz 360° -coverage passive CMOS phase shifters.]]>277663665888<![CDATA[A Compact 0.9-/2.6-GHz Dual-Band RF Energy Harvester Using SiP Technique]]>$\mu \text{m}$ CMOS technology. The CMOS chip is flipped and bonded onto the IPD carrier through low-loss gold bumps. The proposed BPF/BSF can provide zeros and poles to pass and stop signals, respectively, allowing dual-band operation. Moreover, high-Q IPD passive components are employed to design the matching networks and the filters. This not only gives a compact solution but higher impedance transformation ratio between the source resistance and the rectifier input impedance also becomes feasible, which provides higher voltage gain to greatly enhance the RF-to-dc conversion efficiency. The proposed RF EH can give measured output voltage of 1.35 and 1 V with RF-to-dc conversion efficiency of 12.6% and 7% at 0.93 and 2.63 GHz, respectively, as the input power is −15.4 dBm and the load resistance is 500 $\text{k}\Omega $ . The EH only occupies an area of 11.6 mm^{2}.]]>277666668730<![CDATA[Quadband Rectifier Using Resonant Matching Networks for Enhanced Harvesting Capability]]>$\text{k}\Omega $ load.]]>2776696711247<![CDATA[Design, Realization, and Evaluation of a Riemann Pump in GaN Technology]]>$50~\Omega $ . Furthermore, the gallium nitride (GaN) high-electron-mobility transistor technology provides high-switching frequencies to ensure an oversampling ratio of 5 for a wide baseband bandwidth. The Riemann Pump, which is controlled with a digital bit-stream, is based on the current-steering topology and provides the possibility to synthesize arbitrary waveforms. A 2-b RF DAC was designed with multiple GaN monolithic microwave-integrated circuits and proves the feasibility to generate arbitrary waveforms. Measurement results yield triangular signals with a baseband frequency of 100 MHz for an input-control data rate of 200 Mb/s.]]>277672674843<![CDATA[A 220–275 GHz Direct-Conversion Receiver in 130-nm SiGe:C BiCMOS Technology]]>$f_{T}/f_{\text {max}}=300$ /500 GHz. A mixer-first receiver is implemented, with a new dc offset cancellation loop architecture to compensate for the mixer dc offsets and biasing purposes. A transimpedance amplifier is utilized as a load for the mixer, optimized with the dc offset cancellation loop to maximize the bandwidth. A local oscillator (LO) chain that multiplies by 8 a 30-GHz input signal drives the mixer. The proposed receiver achieves the widest 3-dB bandwidth among the published works of 55 GHz, with a conversion gain of 13 dB. The measured average single-sideband noise figure is 18 dB. It dissipates 500 mW, while occupying 1.25 mm^{2}, requiring LO input signal of only −10 dBm.]]>2776756771985<![CDATA[Impact of an IR-UWB Reading Approach on Chipless RFID Tag]]>277678680629<![CDATA[Error-Corrected Reflection and Transmission Scattering Parameters of a Two-Port Device]]>277681683952<![CDATA[Introducing IEEE Collabratec]]>2776846842216<![CDATA[IEEE Microwave and Wireless Components Letters information for authors]]>277C3C372