http://ieeexplore.ieee.org TOC Alert for Publication# 66 2013 May 16 26 2 C1 C1 56 26 2 C2 C2 136 26 2 177 177 22 26 2 178 187 695 26 2 188 195 93 26 2 196 213 556 ${rm TMA}^{+}$ ion. The pseudo-second-order kinetic model fits the data of uptake rate well. When using an SAC exchange resin, the pH does not affect the uptake efficiency, while that of the WAC exchange resin is strongly affected by the pH. Regeneration experiments show excellent performance of resins after five cycles. The selectivity coefficient of ${rm TMA}^{+}$ over ${rm H}^{+}$ for SAC is calculated as 5.16, while for WAC, in the bulk solution, the selectivity coefficient is notably lower $(6.45times 10^{-4})$. The presence of competing ions interfere with the ${rm TMA}^{+}$ uptake, of which ${rm Mg}^{2+}$ has the most notable effect. The ion exchange model is applied to obtain resin selectivity over the ${rm TMA}^{+}$ ion as well.]]> 26 2 214 220 321 26 2 221 225 729 ${mmb{mu}}{rm m}$ CMOS process. The chip consists of a 4 $,times,$16 metal–insulator–metal capacitor array and a measurement circuit. The measured standard deviation of the capacitance mismatch, $sigma(Delta{rm C}_{n}{{<}{rm C}{>}})$, ranges from 0.0067% to 0.0130%, and the measured standard deviation of the short-term repeatability, $sigma(Delta (Delta{rm C}_{n}/{<}{rm C}{>}))$, is 0.0025%. These results show that the measurement accuracy of the proposed method is improved by ten times over that of the FGCM method.]]> 26 2 226 232 982 $c$-axis-oriented ZnO film of thickness 2.4 $mu{rm m}$, which is covered with 0.2-$mu{rm m}$-thick PECVD ${rm SiO}_{2}$, is sandwiched between two aluminum electrodes on a 25- $mu{rm m}$-thick silicon diaphragm. This diaphragm thickness has been optimized to withstand sound pressure level range of 120–160 dB. Stress distribution studies using ANSYS have been performed to determine the locations for placement of capacitor electrodes. This paper also reports a technique for the creation of a positive slope of the ZnO step to ensure proper coverage during Al metallization. In order to maximize yield, process steps have been developed to avoid the microtunnel blockage by silicon/glass particles. The packaged sensor is found to exhibit a sensitivity of 382 $mu{rm V/Pa}$ (RMS) in the frequency range from 30 to 8000 Hz, under varying acoustic pressure.]]> 26 2 233 241 868 26 2 242 247 974 $mu{rm m}$ technology. By simply using the p-type drift drain (PDD) implantation of p-type LDMOS into n-type LDMOS, breakdown voltage $({rm V_{BD}})$ is substantially improved. For a thorough study of device phenomena, hydrodynamic transport simulations are first performed to analyze the electric field distributions at high voltage bias in order to explain increases in breakdown voltage and predict its optimal design parameter. Then fabrication of the devices is performed and shows that the breakdown voltages increase significantly. The measurement results show a 12% improvement in ${rm V}_{rm BD}$ and a 5% improvement in figure of merit (FOM). Throughout the fabrication process, the enlarged breakdown voltage obtained by the PIL without additional process and device area show the potential of cost effective. Because such devices have good off-state breakdown voltage and specific on-resistance, they are very competitive with similar technologies and promising system-on-chip (SOC) applications.]]> 26 2 248 252 506 26 2 253 259 771 26 2 260 260 338 26 2 C3 C3 95 26 2 C4 C4 5