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		<title><![CDATA[ Quantum Electronics, IEEE Journal of - new TOC ]]></title>
		<link>http://ieeexplore.ieee.org</link>
		<description>TOC Alert for Publication# 3 </description>
		<year>2012</year>
		<month>February </month>
		<day>10</day>
		<item>
			<title><![CDATA[First Laser Action Observed From Optically Pumped <formula formulatype="inline">  <img src="/images/tex/20167.gif" alt="{{\rm CH}_{3}}{^{17}{\rm OH}}"> </formula>]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6111422]]></link>
			<description><![CDATA[The <formula formulatype="inline"><tex Notation="TeX">${{rm CH}_{3}}{^{17}{rm OH}}$</tex></formula> isotopic form of methanol has been investigated as a far-infrared laser medium for the first time. Using two distinct experimental systems, this investigation has resulted in the discovery of twelve far-infrared laser emissions that range in wavelength from 69.7 to 642.9 <formula formulatype="inline"><tex Notation="TeX">$mu{rm m}$</tex></formula>. Along with the wavelength, each laser emission is reported with its optimal operating pressure and relative intensity. The frequency for the 69.7 <formula formulatype="inline"><tex Notation="TeX">$mu{rm m}$</tex></formula> line was measured to be <formula formulatype="inline"> <tex Notation="TeX">$4,302,957.7 {pm}{rm 1.0}~{rm MHz}$</tex></formula> and is reported with the <formula formulatype="inline"> <tex Notation="TeX">${rm CO}_{2}$</tex></formula> pump laser's offset frequency relative to its center frequency.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6111422]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>303</startPage>
			<endPage>306</endPage>
			<fileSize>1224</fileSize>
			<authors><![CDATA[Jackson, M.;Nichols, A. J.;Womack, D. R.;Zink, L. R.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Experiment and Theory of an Active Optical Filter]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6069520]]></link>
			<description><![CDATA[The role of gain in an optical filter is advanced by good agreement between theory and experiment presented herein. The particular integrated photonic filter is composed of four semiconductor optical amplifiers and one four-port coupler located at the intersection of the amplifiers. The four-port coupler is realized using frustrated total internal reflection off a very thin slab of alumina embedded in the substrate. The delta function response of the filter is measured using an ultra-fast laser and cross-correlator, and the measured transfer functions agree well with a <formula formulatype="inline"><tex Notation="TeX">$z$</tex></formula>-transform-based description of the device.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6069520]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>307</startPage>
			<endPage>317</endPage>
			<fileSize>1451</fileSize>
			<authors><![CDATA[MacFarlane, D. L.;Christensen, M. P.;Nagdi, A. E.;Evans, G. A.;Hunt, L. R.;Huntoon, N.;Kim, J.;Kim, T. W.;Kirk, J.;LaFave, T. P.;Liu, K.;Ramakrishna, V.;Dabkowski, M.;Sultana, N.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6107511]]></link>
			<description><![CDATA[We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 <formula formulatype="inline"><tex Notation="TeX">$mu{rm m}$</tex></formula>, respectively. We show that a larger mode size not only shifts the mode locking regime of operation toward higher powers, but also produces other improvements with respect to two main failure mechanisms that limit the output power, catastrophic optical mirror damage and catastrophic optical saturable absorber damage. For the 830-nm material structure, we also investigate the effect of nonabsorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6107511]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>318</startPage>
			<endPage>327</endPage>
			<fileSize>1820</fileSize>
			<authors><![CDATA[Tandoi, G.;Ironside, C. N.;Marsh, J. H.;Bryce, A. C.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Characterization of Single-Crystal Synthetic Diamond for Multi-Watt Continuous-Wave Raman Lasers]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6105504]]></link>
			<description><![CDATA[A continuous-wave diamond Raman laser is demonstrated with an output power of 5.1 W at 1217 nm. This Raman laser is intracavity pumped by a side-pumped Nd:YLF rod laser: a 43-fold brightness enhancement between the Nd:YLF and diamond Raman lasers is observed, with the <formula formulatype="inline"><tex Notation="TeX">${rm M}^{2}$</tex></formula> beam propagation factor of the diamond Raman laser measured to be <formula formulatype="inline"><tex Notation="TeX">${&lt;}{1.2}$</tex></formula>. Although higher output powers are demonstrated in a similar configuration using <formula formulatype="inline"><tex Notation="TeX">${rm KGd}({rm WO}_{4})_{2}$</tex></formula> (KGW) as the Raman laser material (6.1 W), the brightness enhancement is much lower (2.5 fold) due to the poorer beam quality of the KGW Raman laser <formula formulatype="inline"><tex Notation="TeX">$({rm M}^{2}&lt;6)$</tex></formula>. The Raman gain coefficient of single-crystal synthetic diamond at a pump wavelength of 1064-nm is also measured: a maximum value of <formula formulatype="inline"><tex Notation="TeX">$21pm 2~{rm cm}/{rm GW}$</tex> </formula> is returned compared to <formula formulatype="inline"><tex Notation="TeX">$5.7pm 0.5~{rm cm}/{rm GW}$</tex></formula> for KGW at the same wavelength.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6105504]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>328</startPage>
			<endPage>337</endPage>
			<fileSize>1147</fileSize>
			<authors><![CDATA[Savitski, V. G.;Friel, I.;Hastie, J. E.;Dawson, M. D.;Burns, D.;Kemp, A. J.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Amplifiers and Lasers Based on Erbium-Doped Photonic Crystal Fiber: Simulation and Experiments]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6092430]]></link>
			<description><![CDATA[In this paper it is shown that, once a particular erbium-doped-silica photonic crystal fiber has been fabricated, the characteristic parameters obtained by means of the technique developed by the authors can be used to properly simulate the main features of optical amplifiers and lasers made of this fiber. This requires assuming that the finite size of the air-holes microstructure makes the overall passive losses per unit length to exhibit an effective dependence on the fiber length. Measurements are performed on a variety of amplifiers and lasers built with pieces of different lengths of two home-made fibers to check the simulation method. A good agreement is found between experimental and simulated results. This means that the proposed method is useful to design optimized erbium-doped photonic crystal fiber amplifiers and lasers for particular applications.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6092430]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>338</startPage>
			<endPage>344</endPage>
			<fileSize>2035</fileSize>
			<authors><![CDATA[Sanchez-Martin, J. A.;Abenia, J. M. &#x00C1;.;Rebolledo, M. &#x00C1;.;Andres, M. V.;Diez, A.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Thermal Management of Near-Infrared Semiconductor Disk Lasers With AlGaAs Mirrors and Lattice (Mis)Matched Active Regions]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6112706]]></link>
			<description><![CDATA[A detailed finite-element analysis of the thermal characteristics of semiconductor disk lasers with AlGaAs mirrors is presented. A comparison of the thermal resistance of devices operating in the 1200&#x2013;1600 nm wavelength range using either lattice-matched GaAs-based active regions or lattice-mismatched InP-based active regions is performed and reveals similar performance. A variety of semiconductor chip design, mounting, and pumping strategies are subsequently investigated to help define guidelines for an effective thermal management of these devices. As it could be anticipated, the results suggest that best thermal performance is generally achieved when the heat extraction path is minimized.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6112706]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>345</startPage>
			<endPage>352</endPage>
			<fileSize>548</fileSize>
			<authors><![CDATA[Vetter, S. L.;Calvez, S.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Theoretical Investigation of Striped and Non-Striped Broad Area Lasers With Off-Axis Feedback]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6094153]]></link>
			<description><![CDATA[We report a method to improve the beam quality of broad area lasers by using a V-shaped external cavity formed by two off-axis feedback mirrors that allow to select a single transverse mode with transversally modulated intensity distribution. In the case when one of the two feedback mirrors is absent a spontaneous formation of self-induced transverse population grating leading to a reduction of the lasing threshold is observed. Most favorable conditions for stabilization of a single transverse supermode and creation of a high power and high brightness plane wave traveling in the extended cavity are obtained for equal reflectivities of the two external reflectors.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6094153]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>353</startPage>
			<endPage>360</endPage>
			<fileSize>850</fileSize>
			<authors><![CDATA[Lichtner, M.;Tronciu, V. Z.;Vladimirov, A. G.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Infrared Tunable Multichannel Filter in a Doped Semiconductor-Dielectric Photonic Crystal Heterostructure]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6111424]]></link>
			<description><![CDATA[A design of near- to mid-infrared tunable multichannel filter (MCF) based on the doped semiconductor-dielectric photonic crystal (PC) heterostructure is proposed. Here, a strongly extrinsic semiconductor, <formula formulatype="inline"><tex Notation="TeX">$n$</tex></formula>-type germanium <formula formulatype="inline"> <tex Notation="TeX">$(n{hbox{-}}{rm Ge})$</tex></formula>, is used as one of the constituent layers. The occurrence of multichannel feature originates from the negative-permittivity in the highly doped <formula formulatype="inline"> <tex Notation="TeX">$n{hbox{-}}{rm Ge}$</tex></formula>. The existence of tunable feature is due to its concentration-dependent permittivity. It is of interest to find that, in such MCFs, the number of channels, i.e., the number of resonant transmission peaks, is directly related to the stack number, and these peaks are located within the pass band of the ideal host PC. The multiple channels are blueshifted as the impurity concentration increases. This design suggests an alternative of engineering the pass band for realizing an MCF instead of engineering photonic band gap in a PC containing photonic quantum well structure as a defect. Our analysis is made based on the transfer matrix method together with the Bloch theorem.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6111424]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>361</startPage>
			<endPage>366</endPage>
			<fileSize>581</fileSize>
			<authors><![CDATA[Hung, H.-C.;Wu, C.-J.;Chang, S.-J.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Numerical Study of the Effects of Hetero-Interfaces, Polarization Charges, and Step-Graded Interlayers on the Photovoltaic Properties of (0001) Face GaN/InGaN p-i-n Solar Cell]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6112707]]></link>
			<description><![CDATA[The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6112707]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>367</startPage>
			<endPage>374</endPage>
			<fileSize>945</fileSize>
			<authors><![CDATA[Kuo, Y.-K.;Chang, J.-Y.;Shih, Y.-H.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Electromagnetic Modeling of Quantum Well Infrared Photodetectors]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6095576]]></link>
			<description><![CDATA[Rigorous electromagnetic field modeling is applied to calculate the quantum efficiency of various quantum well infrared photodetector (QWIP) geometries. We found quantitative agreement between theory and experiment for corrugated-QWIPs, grating-coupled QWIPs, and enhanced-QWIPs, and the model explains adequately the spectral lineshapes of the quantum grid infrared photodetectors. After establishing our theoretical approach, we used the model to optimize the detector structures for 12-micron pixel pitch focal plane arrays.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6095576]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>384</startPage>
			<endPage>393</endPage>
			<fileSize>1474</fileSize>
			<authors><![CDATA[Choi, K.-K.;Jhabvala, M. D.;Forrai, D. P.;Waczynski, A.;Sun, J.;Jones, R.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Relative Intensity Noise Reduction by Optimizing Fiber Grating Fabry&#x2013;Perot Laser Parameters]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6112166]]></link>
			<description><![CDATA[A set of nonlinear rate equations that can describe an external cavity laser with any arbitrary external optical feedback (OFB) level are derived. A comprehensive study on the relative intensity noise (RIN) characteristics of a fiber grating Fabry&#x2013;Perot is performed numerically. In this paper, fiber Bragg grating (FBG) is used as a wavelength lasing selective element to control the external OFB level, thereby control the RIN. In addition to the external OFB level, the effect of other external cavity parameters such as temperature, injection current, cavity volume, gain compression factor, and FBG parameters on RIN characteristics is investigated. The temperature dependence (TD) of RIN is calculated according to TD of laser parameters instead of well-known Parkove relationship. Results show that by optimization, the peak value of the RIN can be reduced down to around <formula formulatype="inline"> <tex Notation="TeX">${-}{rm 150}~{rm dB}/{rm Hz}$</tex></formula>. The optimum and the shortest external cavity length that provides the minimum RIN is found to be around 3.1 cm. In addition, by optimization, the relaxation oscillation frequency of RIN spectra is shifted toward around 5.6 GHz.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6112166]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>375</startPage>
			<endPage>383</endPage>
			<fileSize>613</fileSize>
			<authors><![CDATA[Hisham, H. K.;Abas, A. F.;Mahdiraji, G. A.;Mahdi, M. A.;Noor, A. S. M.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Frequency-Domain Model of Longitudinal Mode Interaction in Semiconductor Ring Lasers]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6123171]]></link>
			<description><![CDATA[A general and comprehensive frequency-domain model of longitudinal mode interactions in semiconductor ring lasers (SRLs) is presented, including nonlinear terms related to third order nonlinear susceptibilities <formula formulatype="inline"><tex Notation="TeX">$chi^{3}$</tex></formula> and also linear terms due to back scattering between counter-propagating modes. The model can handle a large number of modes and complex third order nonlinear processes such as self-suppression, cross-suppression and four wave mixing occurring due to both interband and intraband effects. Every aspect of the lasing characteristics of SRLs, including lasing spectra, light-current curves and lasing direction hysteresis, can be reproduced by the model. To assess the performance and validity of the model, several miniaturized SRLs are designed, fabricated and tested. Stable unidirectional lasing in SRLs is also demonstrated by introducing asymmetric feedback from external facets. Good agreement between theoretical and experimental results is demonstrated.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6123171]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>406</startPage>
			<endPage>418</endPage>
			<fileSize>1244</fileSize>
			<authors><![CDATA[Cai, X.;Ho, Y.-L. D.;Mezosi, G.;Wang, Z.;Sorel, M.;Yu, S.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Fourier Space Analysis of an Elliptical Micropillar Cavity]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6125965]]></link>
			<description><![CDATA[We analyze two linearly polarized modes in an elliptical micropillar cavity through Fourier space analysis, where the in-plane wavevector corresponds to the incidence angle with the distributed Bragg reflector (DBR). The Fourier space field pattern shows that the spreading angle along the short axis is larger, so that it has the greatest effect on the reflectivity. The higher quality factor <formula formulatype="inline"><tex Notation="TeX">$(Q)$</tex></formula> in the x-polarized mode parallel to the long axis of the elliptical cross-section can be explained by the fact that s-polarization has higher reflectivity for broader incidence angle to the DBR than p-polarization. The calculated <formula formulatype="inline"> <tex Notation="TeX">$Q$</tex></formula> factors increases with the diameter of the cavity due to smaller spreading angles. This Fourier analysis of the micropillar cavity modes could be widely applied to optimize the cavities for high <formula formulatype="inline"><tex Notation="TeX">$Q$</tex></formula> and small <formula formulatype="inline"><tex Notation="TeX">$V$</tex> </formula>.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6125965]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>419</startPage>
			<endPage>424</endPage>
			<fileSize>593</fileSize>
			<authors><![CDATA[Kwon, S.-H.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Investigation of Polaron Pair Dynamics in Poly(3-Hexylthiophene) Film by Time Resolved Spectroscopy]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6109302]]></link>
			<description><![CDATA[Polaron pair dynamics in regioregular Poly (3-hexylthiophene) (RR-P3HT) film was studied by applying both femtosecond transient absorption and fluorescence up-conversion techniques. The comparison of the dynamics of the pure fluorescence, the ground state bleaching recovery and the polaron pair absorption reveals that the polaron pairs decay back to the ground state of certain morphological places with distinct absorption features, instead of the singlet excited state.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6109302]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>425</startPage>
			<endPage>432</endPage>
			<fileSize>778</fileSize>
			<authors><![CDATA[Gao, B.-R.;Wang, H.-Y.;Wang, H.;Yang, Z.-Y.;Wang, L.;Jiang, Y.;Hao, Y.-W.;Chen, Q.-D.;Sun, H.-B.;]]></authors>
		</item>
		<item>
			<title><![CDATA[Improvement in the Performance of a Semiconductor Optical Amplifier Based Delayed Interference Signal-Wavelength Converter With Phase Offset of a Mach-Zehnder Delay Interferometer and BPF Detuning]]></title>
			<link><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6111423]]></link>
			<description><![CDATA[We investigated the improvement in the wavelength conversion performance of a semiconductor optical amplifier-based delayed interference signal-wavelength converter with the phase offset of a Mach-Zehnder delay interferometer and band pass filter (BPF) detuning. In the experiments, the power penalty of the wavelength converted output was improved using negative phase offset due to the suppression of double pulse and reduction of zero level power, and the transmission characteristics were improved using negative detuning of a BPF because of the elimination of the degraded components in the output signal. Moreover, the power penalty was optimized using a <formula formulatype="inline"><tex Notation="TeX">${-}{rm 0.12}~{rm rad}$</tex></formula> phase offset and <formula formulatype="inline"><tex Notation="TeX">${-}{rm 0.15}~{rm nm}$</tex></formula> BPF detuning at a bit rate of 10 Gb/s. We also investigated its effect via simulations by solving rate equations. The waveform and Q-factor of the wavelength converted signal were in good qualitative agreement with the experimental results. We studied the principle of the impact of both phase offset and BPF detuning on output signal improvement by a comparison of the optical spectrum of the wavelength converted output with that of the return-to-zero signal. Waveform improvement can be achieved by positioning the intensity of the two sidebands symmetrically on both sides of the carrier.]]></description>
			<pubDate><![CDATA[March  2012]]></pubDate>
			<guid><![CDATA[http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=6141210&arnumber=6111423]]></guid>
			<volume>48</volume>
			<issue>3</issue>
			<startPage>433</startPage>
			<endPage>439</endPage>
			<fileSize>721</fileSize>
			<authors><![CDATA[Namiki, M.;Mori, T.;Shimizu, S.;Uenohara, H.;]]></authors>
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