http://ieeexplore.ieee.org TOC Alert for Publication# 2944 2013 May 21 19 5 3800310 3800310 1278 19 5 9000406 9000406 1444 $_{x}$ (SiO$_{x}$:Si-QD)-based ridge waveguide amplifier with an inhomogeneously broadened spontaneous emission is analyzed and simulated. The small-signal power gain and the direct bandgap radiative recombination rate of SiO$_{x}$ :Si-QD waveguide amplifier are linked by correlating the rate equation of semiconductor amplifier (SOA) with the finite-potential-well Schrödinger equation based on a zero-phonon assisted recombination model. Due to the increased momentum overlapping probability of an electron–hole pair in Si-QDs, the radiative lifetime of Si-QDs is abruptly decreased from 6.3 μs to 83 ns by shrinking the average Si-QD size from 4.3 to 1.9 nm. Furthermore, the differential gain and transparency carrier density of SiO$_{x}$ :Si-QD amplifier have been estimated by simulating the small-signal power gain with rate equation of SOA and zero-phonon assisted recombination model, which are mandatory for designing the Si-QD-based optical amplifier. The small-signal gain coefficients of the SiO$_{1.24}$:Si-QD and SiO$_{1.42}$:Si-QD based amplifiers are determined as 9.6 cm $^{-1}$ at 785 nm and 2.3 cm $^{-1}$ at 650 nm, respectively. The differential gains of 6 × 10 $^{-15}$ and 4 × 10- formula formulatype="inline"> $^{-15}$ cm$^{2}$ with the transparency carrier density of 6 × 10$^{18}$ and 2 × 10 $^{18}$ cm$^{-3}$ are determined for the SiO$_{1.24}$:Si-QD and SiO $_{1.42}$:Si-QD.]]> 19 5 3000109 3000109 792 $_{0.62}$Sb$_{0.38}$ SLS. Its predicted ideal dark current is about 35 times lower than an n-type HgCdTe-based photodiode absorber and six times lower than a p-type HgCdTe one for the same bandgap, temperature, and dopant concentration. We also discuss a defect mitigation strategy that involves positioning the SLS gap in an energy range that avoids defect levels and show how this applies to the aforementioned P-containing SLS.]]> 19 5 3800306 3800306 650 19 5 1900410 1900410 897 $_{0.68}$In $_{0.32}$N$_{x}$ As$_{1-x}$ result in quantum dot (QD)-like fluctuations in the conduction band edge (CBE). The influence of these compositional fluctuations on the performance of Ga $_{0.68}$In$_{0.32}$ N$_{x}$As$_{1-x}$ /GaAs quantum well (QW) lasers has been studied using a rate equation approach. Adding N into InGaAs has been observed to reduce the photon luminescence (PL) intensity, broaden the line width, and increase the laser threshold. For low N composition (N ≈ 1%), due to the small density of QD-like fluctuations, the electron density within the fluctuations is below the lasing threshold and they act as defect-related nonradiative centers. However, as N increases (N ≥ 2%), the density of the QD-like fluctuations increases allowing lasing to occur from the QD-like fluctuations. The dynamics of the electrons and photons in both the 2-D QW and the QD-like fluctuations are evaluated. In addition, by adding the gain of the QD-like fluctuations and the QW confined level gain, a broad-band material gain results can be exploited in tuneable lasers.]]> 19 5 1900509 1900509 1099 19 5 1200611 1200611 666 $^{2}$ at the visible wavelength of 460 nm. Results indicate that the MD remains constant, until the pump frequency exceeds 71 GHz; the higher the pump frequency, the lower the MD. The throughput extinction ratio of the AOM is ∼15 dB at the mentioned roll-off frequency. The MD decreases to ∼45% while the modulation frequency reach to 1 THz. Also, the designed AOM based on cadmium selenide (CdSe) QDs operates with the switching energy of ∼10 fJ.]]> 19 5 3300106 3300106 447 $mu$m in length and contain a single GaAs quantum dot of 2 nm in thickness and 15–45 nm in diameter. Since the crystal phase of these nanowires spontaneously switches during the growth from zincblende (Zb) to wurzite (Wz) structures, we implement a continuum elastic model and an eight-band $vec{k} cdot vec{p}$  model for polymorph crystal structures. The model is used to compute electromechanical fields, wave-function energies of the confined states and optical transitions. The model compares a pure Zb structure with a polymorph in which the Zb disk of GaAs is surrounded by Wz barriers and results are compared to experimental photoluminescence excitation spectra. The good agreement found between theory and features in the spectra supports the polyphorm model.]]> 19 5 1901209 1901209 1101 $B_{{rm eff}}$ of the AlInGaN/InGaN QW structure is much larger than that of the InGaN/GaN QW structure in the investigated range of the current density.]]> 19 5 1901308 1901308 1725 $^{-1}$, the minimum threshold current density drops 60 times from Ge to Ge$_{0.9}$ Sn$_{0.1}$, and the corresponding optimum n-doping concentration of the active layer drops by almost two orders of magnitude. These results indicate that GeSn alloys are good candidates for a Si-compatible laser.]]> 19 5 1502706 1502706 611 19 5 1901410 1901410 1161 19 5 4000110 4000110 832 $hbox{20 Hz}$, drastically deteriorating at $hbox{30 GHz}$ .]]> 19 5 1901508 1901508 1109 19 5 4000208 4000208 828 . We compare the results of the dynamics obtained with our improved model that consists of coupled delay algebraic equations with the results of a standard traveling wave description in the cases of straight current stripes as well as in the important configuration of high-power tapered antireflection coated devices. We obtain an excellent agreement and an improvement of the integration time between one and two orders of magnitudes which may alleviate in some cases the necessity of using complex parallel codes.]]> 19 5 1502808 1502808 7040 19 5 1502913 1502913 4569 19 5 7800107 7800107 759 ${lambda}_{0}^{3}$. The design rules are based on the Fabry–Perot formulation. Experimental demonstration of size reduction is presented using submonolayer quantum-dot-based devices. The size-dependent characteristics are investigated. We show an excellent agreement between theoretical results and experiment data.]]> 19 5 1701809 1701809 896 19 5 1701908 1701908 799 19 5 7800209 7800209 1645 $P_{rm in}$ = 0 dBm, the complete recovery is calculated. It is shown that with further increasing of current, recovery time reduces while the final LEF value is unchanged.]]> 19 5 3000207 3000207 601 19 5 1503008 1503008 938 $Lhbox{--}I$ characteristics of SLEDs is developed that is based on a power law with an exponent that is dependent on the chip length. The theoretical model is verified by a comparison with experimental results of a broadband SLED operating in the wavelength region around 1300 nm. It is shown that the model can be also used to extract important simulation parameters from measured $Lhbox{--}I$ characteristics. Finally, results are presented for an improved high-performance SLED structure in the same wavelength region with output powers of more than 50 mW and a 10-dB spectral bandwidth beyond 100 nm.]]> 19 5 7800307 7800307 917 19 5 3100109 3100109 933 19 5 4000308 4000308 608 19 5 1503109 1503109 903 19 5 1702010 1702010 964 ${bf Q}$ whispering-gallery mode (WGM) resonator. So far, there has been no theoretical framework enabling to understand the dynamical behavior of these new architectures of OEOs. In this paper, we propose for the first time a deterministic time-domain model to investigate the dynamics of these OEOs based on WGM resonators. This model enables us to perform the stability analysis of the microwave oscillations, and to determine rigorously their range of stability as the loop gain is varied. After building the model, we perform a full stability analysis of the various stationary solutions for the microwave output. We then perform extensive numerical simulations, which are in complete agreement with the stability analysis. The theoretical analysis is also found to be in excellent agreement with our experimental measurements.]]> 19 5 6000112 6000112 589