http://ieeexplore.ieee.org TOC Alert for Publication# 23 2013 May 16 60 2 C1 1254 166 60 2 C2 C2 137 60 2 1255 1259 1096 2. The Silicon Strip Tracker is the sub-detector with the highest number of detector modules within the CMS experiment. Given the complexity of the device, a variety of tools were developed and are used to determine the status of the detector in real time and allow for data qualification and corrective actions when needed. In this paper we describe the monitoring techniques that are used to safely operate the detector and assess the state of its calibration.]]> 60 2 1260 1264 536 60 2 1265 1271 1173 60 2 1272 1279 1274 60 2 1280 1288 1177 2 /channel) requires an innovative design, where sensitive analog components and massive digital functionalities are integrated on the same chip. Moreover, shut down (power pulsing) features are necessary in order to reduce the power consumption. The Super-Altro is a 16-channel demonstrator ASIC involving analog and digital signal processing. Each channel contains a low noise Pre-Amplifier and Shaping Amplifier (PASA), a pipeline ADC, and a Digital Signal Processor (DSP). The PASA is programmable in terms of gain and shaping time and can operate with both positive and negative polarities of input charge. The 10-bit ADC samples the output of the PASA at a frequency up to 40 MHz before providing the digitized signal to the DSP which performs baseline subtraction, signal conditioning, drift correction and zero suppression. The chip has been fabricated in a 130 nm CMOS technology. Test measurements show correct functionality of the full system, and demonstrate that, using appropriate design techniques, the extensive digital circuitries produce little or no degradation of analog performance (particularly noise).]]> 60 2 1289 1295 835 60 2 1296 1302 888 60 2 1303 1310 602 60 2 1311 1314 870 60 2 1315 1326 2572 3He tubes currently used on the INTER reflectometer of the ISIS spallation neutron source. The detector system is described, and the results from the first neutron beam tests carried out on an ISIS neutron reflectometer are also shown.]]> 60 2 1327 1331 877 60 2 1332 1345 3815 60 2 1346 1353 1277 60 2 1354 1360 1445 60 2 1361 1367 1287 60 2 1368 1372 774 2 films were deposited by plasma enhanced atomic layer deposition (PEALD). PEALD makes in-situ plasma treatment possible, and the film growth temperature can be reduced. The films were characterized. High resolution transmission electron microscopy (HRTEM) indicated both films were amorphous. X-ray photoelectron spectroscopy (XPS) suggested that the interface layer was most likely composed of Hf-Si-O and La-Si-O. MIS capacitors with HfLaO and HfO₂ dielectrics were irradiated by gamma rays with the dose up to 2×10⁶ rad (Si). Electrical measurements indicated that the dielectrics showed relatively stable electrical properties. The equivalent oxide thicknesses (EOT) of HfLaO samples were calculated to be 0.9 nm. At a gate condition of |V_g-V_fb| = 1 V, the leakage current densities were 0.02 mA/cm². With the increasing of the radiation dose, the maximum oxide trap charge density and interface trap charge density for HfLaO samples were calculated to be 2.6×10⁶ cm^-2 and 1.2×10¹² cm^-2, respectively. The analysis of the IV curves suggested that the conduction mechanism in HfLaO samples is the Poole-Frenkel emission.]]> 60 2 1373 1378 1109 2 memristor devices may be a promising candidate for radiation hardened next-generation memories. They have been shown to be tolerant to both gamma radiation and alpha particles. In this work, we expand on the radiation studies previously done and measure the response of a large number of TiO₂ memristor test devices to both neutrons and protons. We also use simulations to estimate the amount of damage done for each type and level of radiation and correlate the number of displacements to the experimentally measured current-voltage characteristics of the devices. We show that the TiO₂ thin films are tolerant to high fluences of both neutrons and protons.]]> 60 2 1379 1383 766 60 2 1384 1389 674 60 2 1390 1399 1187 60 2 1400 1407 1811 3(Ce) detector with dedicated hardware and software solutions based on digitization and off-line analysis. Spectra were measured at counting rates up to 4 MHz, with little or no degradation of the energy resolution, adopting a pile up rejection algorithm. The reported results represent a step forward towards the final goal of high resolution γ-ray spectroscopy measurements on a burning plasma device.]]> 60 2 1408 1415 1097 -9, while the nonscintillating detector had a neutron efficiency of 0.6 or 0.7%, depending on analysis integration limits, with gamma sensitivity <; 4.93 × 10^-9 and (3.25 ±2.84) × 10^-7, respectively. We determine that increasing the neutron detection efficiency by a factor of 5-6 will make the detector competitive with moderated ³He tubes, and we discuss several simple and straightforward methods for obtaining or surpassing such an improvement. We end with a discussion of possible applications, both for the scintillating-plastic and nonscintillating-plastic detectors.]]> 60 2 1416 1426 1904 60 2 1427 1431 561 -10 to 10^-12v A with a bulk resistivity of at least 10¹²-10¹³ Ω.cm. Alpha particle spectroscopy measurements demonstrated an electron charge collection efficiency of up to 90% with reasonable reproducibility of the acquired spectra. Evidence of (incident particle) rate dependent polarisation was seen following a constant applied bias combined with alpha irradiation over a period of time (order of tens of minutes). The ability of the wafer to detect fast neutrons was demonstrated and a comparison drawn with the MCNPX simulated response of a bulk SiC device. Comparing the MCNPX simulated response of a bulk SiC device to that of a silicon device suggests a superior ability to detect fast neutrons with an intrinsic efficiency 1.7 times that of silicon.]]> 60 2 1432 1435 593 2 at +20^°C and 0.3 μA / cm² at +104^°C with an internal electric field of 7 kV/cm have been measured. X- γ ray spectra from ²⁴¹Am have been acquired at room temperature with pulser line width of 756 eV FWHM. The charge collection efficiency (CCE) has been measured under different experimental conditions with a maximum CCE = 75% at room temperature. Polarization effects have been observed, and the dependence of CCE on time and temperature has been measured and analyzed. The charge trapping has been described by the Hecht model with a maximum total mean drift length of 107 μm at room temperature.]]> 60 2 1436 1441 1002 °C temperature increase is to decrease the detected energy by 0.1 keV for events depositing 30 keV. For the electronic noise, no statistically significant temperature effect was discernible in the data set, although theory predicts a weak dependence. The method is applicable to all x-ray detectors operating in pulse mode.]]> 60 2 1442 1449 1448 nτn=2.9 × 10^-3 cm²V^-1. The velocity of electron drift was calculated from the rise time distribution of the preamplifier's output pulses at each measured bias. The electron mobility was extracted from the electric field dependence of the drift velocity and at room temperature it has a value of μn=(950±90) cm²/Vs. High-resolution maps of the charge collection efficiency have been measured using a scanning microbeam of 5.5 MeV ⁴He²⁺ ions focused to a beam diameter <; 1 μm and display large-area spatial uniformity. The evolution of charge collection uniformity across the detector has been highlighted by acquiring measurements at applied biases ranging between 50 V and 1100 V. Charge transport inhomogeneity has been associated with the presence of bulk defects. It has been demonstrated that minimizing the content of impurities in the MnTe source material is highly effective in achieving major improvements in the CMT detector's performance as compared to previous data.]]> 60 2 1450 1456 1535 e⁺e^- collider.]]> 60 2 1457 1465 1489 60 2 1466 1466 1157 60 2 1467 1467 3172 60 2 1468 1468 1842 60 2 C3 C3 83 60 2 C4 C4 18