<![CDATA[ Electronics Letters - new TOC ]]>
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TOC Alert for Publication# 2220 2014November 17<![CDATA[in brief]]>502316501650132<![CDATA[interview]]>50231650165085<![CDATA[in a flash]]>502316511651400<![CDATA[on top with graphene]]>502316521652282<![CDATA[Dual-polarised cavity-backed annular slot antenna of compact structure]]>502316551656375<![CDATA[Miniaturised frequency selective surface based on 2.5-dimensional closed loop]]>λ_{0} × 0.048λ_{0}) and shows almost the same transmission coefficient for different polarisations and incident angles. A prototype of the proposed FSS has been fabricated and measured. The results of the experiment show a consistency with the simulated ones.]]>502316561658502<![CDATA[Ultra-broadband linearly polarisation manipulation metamaterial]]>502316581660467<![CDATA[Broadband circularly polarised antenna with asymmetric ground and L-shaped strips]]>502316601662508<![CDATA[Noise figure reduction by port decoupling for dual circular polarised microstrip antenna]]>502316621664207<![CDATA[Printed triple-band circularly polarised antenna for wireless systems]]>502316641665522<![CDATA[Screen-printed silver-ink antennas for frequency-reconfigurable architectures in LTE phones]]>502316651667435<![CDATA[Arrival modelling for molecular communication via diffusion]]>502316671669277<![CDATA[Minimum energy channel codes for molecular communications]]>502316691671188<![CDATA[Bio-signal acquisition circuit with high signal-to-noise ratio for u-healthcare system]]>502316711673656<![CDATA[Capacitance-sharing, dual-output, compact, switched-capacitor DC–DC converter for low-power biomedical implants]]>2 and achieving a peak efficiency of 97.6% is demonstrated.]]>502316731675604<![CDATA[Compact slotted semi-circular antenna for implantable medical devices]]>3. A bandwidth of 25 MHz is obtained at return loss of 10 dB. In addition, the radiation and specific absorption rate (SAR) performance of the antenna are examined and characterised.]]>502316751677335<![CDATA[Design for security test against fault injection attacks]]>502316771678178<![CDATA[Dual-mode CMOS feed-forward transimpedance amplifier for LADARs]]>−12 bit error rate and 20.7 mW power dissipation from a single 1.8 V supply.]]>502316781680551<![CDATA[Hybrid radix-4/-8 truncated multiplier for mobile GPU applications]]>502316801682350<![CDATA[Electrical localisation of full open defects in comb–meander–comb structures]]>502316821683264<![CDATA[High-frequency reverse-time chaos generation using digital chaotic maps]]>502316831685291<![CDATA[Flexible method to calibrate projector–camera systems with high accuracy]]>502316851687267<![CDATA[Simple algorithm for correction of geometrically warped underwater images]]>502316871689300<![CDATA[Colour interpolation using adaptive window for Bayer colour fitter array]]>502316891691395<![CDATA[Frequency-based image deblurring with periodic point spread function]]>502316911693398<![CDATA[One million fps digital holography]]>502316931695560<![CDATA[Perceptual sharpness metric based on human visual system]]>502316951697186<![CDATA[Person re-identification based on efficient multi-channel spatial histogram]]>502316971699270<![CDATA[Game model for switch migrations in software-defined network]]>502316991700106<![CDATA[Area-efficient method to approximate two minima for LDPC decoders]]>502317011702256<![CDATA[Fractional order constant modulus blind algorithms with application to channel equalisation]]>502317021704310<![CDATA[Magnetic sheet-backed search coil for pulsed-induction metal detector system]]>502317041706568<![CDATA[Low-voltage quadrature LC oscillator with fast start-up]]>502317061708370<![CDATA[Stable multiple non-Foster circuits loaded waveguide for broadband non-dispersive fast-wave propagation]]>502317081710382<![CDATA[Wide-locking range class-C injection-locked frequency divider]]>502317101712362<![CDATA[Compact microstrip triplexer based on twist-modified asymmetric split-ring resonators]]>502317121713323<![CDATA[Millimetre-wave broadband waveguide-based power combiner using lossy planar lines]]>502317141715404<![CDATA[Multi-carrier transmission of vectorial modulation schemes using electronic transceivers at 588 GHz]]>502317151717630<![CDATA[Cascaded trisection substrate-integrated waveguide filter with high selectivity]]>S-parameters agree well with the simulated counterparts, and good performance of the filter is predicted.]]>502317171719330<![CDATA[Quad-band bandpass filter design by embedding dual-band bandpass filter with dual-mode notch elements]]>502317191720250<![CDATA[Chipless RFID tag using RF MEMS switch]]>502317201722501<![CDATA[Correlation of threading screw dislocation density to GaN 2-DEG mobility]]>502317221724241<![CDATA[Fabrication and measurement of graphene p–n junction with two top gates]]>I–V) curve measurement results also indicate that there is no nonlinear phenomenon in a weakly induced graphene p–n junction. This graphene p–n junction can potentially be used for terahertz wave generation.]]>502317241726355<![CDATA[Front-end Δ<italic>C</italic>/<italic>C</italic><sub>0</sub> capacitive interface based on negative impedance converter]]>C_{0} from the sensor gain transfer function. The circuit enables integration of an accurate and very sensitive capacitance-to-voltage converter with ordinary discrete operational amplifiers. This is required in experimental scientific instrumentation as well as in the integrated CMOS interface of capacitive microelectromechanical systems (MEMSs) and touchscreens. Circuit description, noise considerations and measured results are presented.]]>502317261728651<![CDATA[AC response of 0.35 µm CMOS triple-junction photodetector]]>502317281729249<![CDATA[Coherence improvement in dispersion-tuned swept laser by pulse modulation]]>502317291731667<![CDATA[InAs/GaAs <italic>p</italic>–<italic>i</italic>–<italic>p</italic> quantum dots-in-a-well infrared photodetectors operating beyond 200 K]]>p–i–p quantum dots-in-a-well infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped self-assembled InAs quantum dots (QDs) asymmetrically positioned in In_{0.15}Ga_{0.85}As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p–i–p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.]]>502317311733474<![CDATA[Influence of composition in InAs/GaSb type-II superlattices on their optical properties]]>502317331734394<![CDATA[Generation of wind power time series to fit time-domain characteristics]]>502317341736302<![CDATA[Performance improved by point-contact electrodes and SiO<sub>2</sub>/SiN<italic><sub>X</sub></italic> layers at rear]]>2) and protection (SiN_{X}) were employed to investigate their impact on the performances of solar cells. The SiN_{X} layer protects the SiO_{2} layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO_{2} and SiN_{X} layers, which also achieves a lower contact resistance of 6.66 mΩ·cm^{2} and a higher light-beam-induced current of 80.77 mA/cm^{2}. The optimal cell also showed longer lifetime and 3–4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.]]>502317361738227<![CDATA[Efficient calculation of information reduction factor for tracking in clutter]]>502317381740173<![CDATA[Efficient weak manoeuvring target detection method for DSSS signal]]>502317401741289<![CDATA[Geo-location error analysis in geosynchronous SAR]]>502317411743223<![CDATA[Hybrid STAP approach of direct data domain algorithm and adaptive localised domain transformation for discrete interference suppression in non-homogeneous clutter]]>502317431745455<![CDATA[Analytical relationship between subthreshold swing of thermionic and tunnelling currents]]>502317451747195<![CDATA[High-performance HfO<sub>2</sub>/ZrO<sub>2</sub>/IGZO thin-film transistors deposited using atmospheric pressure plasma jet]]>k dielectric HfO_{2}/ZrO_{2} gate stack, IGZO-based transparent thin-film transistors (TFTs) were fabricated and characterised. The HfO_{2}/ZrO_{2}/IGZO-TFTs by APPJ demonstrated excellent electrical characteristics, including a low V_{th} of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm^{2}/V-s and a large I_{on}/I_{off} ratio of 7 × 10^{8}.]]>502317471749306<![CDATA[Normally-off vertical-type mesa-gate GaN MOSFET]]>+-GaN which is the drain of the device, whereas the trench-gate structure, the commonly used structure for the vertical-type MOSFETs, requires an additional etching process to define the gate region. The mesa-gate GaN MOSFET exhibited a normally-off operation with the threshold voltage of 3 V, a normalised drain current of ∼ 55 mA/mm and a high on/off current ratio of 10^{8}.]]>502317491751404<![CDATA[Two-stage hot-carrier-induced degradation of p-type LDMOS transistors]]>I_{Dlin}) shift (I_{Dlin} shift increases rapidly at the beginning of stress but tends to saturate when the stress time is longer) is observed. Technology computer-aided-design simulations and direct current current–voltage measurement results suggest that the decrease of residual fabrication interface traps (N_{IT}) leads to an initial increase in I_{Dlin} shift. On the other hand, two competing mechanisms, i.e. increase in N_{IT} generation and increase in electron trapping, are responsible for the saturated I_{Dlin} shift when the stress time is longer.]]>502317511753605<![CDATA[Methodology for RF receiver sensitivity analysis using electromagnetic field map]]>502317531755688<![CDATA[Simple timing recovery algorithm for binary CPFSK based on phase unwrapping]]>502317551757175<![CDATA[Block-windowed burst OFDM: a high-efficiency multicarrier technique]]>502317571759234<![CDATA[High-rate relay beamforming for simultaneous wireless information and power transfer]]>502317591761153<![CDATA[Low-complexity frame synchronisation method for IEEE 802.15.4 systems]]>502317611762221<![CDATA[Wideband power amplifier for two-way radio applications via real-frequency technique]]>502317621764364<![CDATA[Determination of optimal frame sizes in framed slotted ALOHA]]>N/ln 2 for N tags.]]>50231764176674<![CDATA[Open-loop precoder for spatial multiplexing in MIMO channels with phase correlation]]>502317661768370<![CDATA[Simplified fault-tolerant FIR filter architecture based on redundant residue number system]]>502317681770117<![CDATA[Uplink channel estimation for massive MIMO systems exploring joint channel sparsity]]>502317701772115<![CDATA[Uplink outage performance of linear cellular networks with non-uniform user distribution]]>502317721774401<![CDATA[Erratum: ‘Energy-efficient sub-DAC merging scheme for variable resolution SAR ADC’]]>502317741774203