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TOC Alert for Publication# 22 2016June 23<![CDATA[Table of contents]]>646C1C4255<![CDATA[IEEE Transactions on Microwave Theory and Techniques publication information]]>646C2C2176<![CDATA[Greedy Multipoint Model-Order Reduction Technique for Fast Computation of Scattering Parameters of Electromagnetic Systems]]>a posteriori error estimates to check both local model convergence, used to select the number of moments at a single expansion point, and global model convergence, used to optimally select the expansion points. Secondly, the question of optimal convergence measure is addressed by proposing an enhanced a posteriori error estimator particularly suited for scattering parameter computations for lossy EM systems. The effectiveness and efficiency of the proposed automated scheme is verified through numerical simulations using reduced-order models for examples of a bandstop dielectric resonator filter and a dielectric resonator antenna for a wide frequency band, and compared against the results obtained using the full-order model, a reduced model generated with the optimal greedy point selection algorithm, as well as the reduced-order models obtained using the reduced basis method (RBM) and the single-point second-order Arnoldi method for passive order reduction (SAPOR) method.]]>646168116932087<![CDATA[Design and Analysis of a High-Selectivity Frequency-Selective Surface at 60 GHz]]>646169417032227<![CDATA[Theory on Matching Network in Viewpoint of Transmission Phase Shift]]> -type, and the T-type network for a given load and source impedance with desired phase shift have been derived. The concepts of allowed and forbidden regions for such matching circuits, in the impedance phase-shift plane, have been established. Two prototype impedance transformers have been fabricated and measured to establish the proposed concept.]]>646170417162552<![CDATA[Slow-Wave Effect of Substrate Integrated Waveguide Patterned With Microstrip Polyline]]>646171717262866<![CDATA[A Unified Equivalent-Circuit Model for Coplanar Waveguides With Silicon-Substrate Skin-Effect Modeling]]> resistivity Si substrates. The electric field distributions of the CPWs are analyzed and compared, to demonstrate that the operation mode of the line on the resistivity Si substrate is the skin-effect mode and is different compared to the commonly used quasi-TEM mode in high-resistivity substrates. A novel unified equivalent circuit is developed to model all the three operation modes for CPWs (the slow-wave mode, the skin-effect mode, and the dielectric quasi-TEM mode). Agilent Momentum is used to compare with the model up to 110 GHz. CPWs with different substrate resistivities and geometries are then fabricated for verification. The results show that this model can be applied to CPWs with various geometries on different resistivity substrates. Since the model is physics based and analytical, it can be easily included with other device models for RF applications.]]>646172717352525<![CDATA[Accurate Transistor Modeling by Three-Parameter Pad Model for Millimeter-Wave CMOS Circuit Design]]>646173617443194<![CDATA[RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model]]>646174517512414<![CDATA[A Novel 4-D Artificial-Neural-Network-Based Hybrid Large-Signal Model of GaAs pHEMTs]]> GaAs pHEMT process were designed based on the novel hybrid model for further practical verification.]]>646175217622039<![CDATA[Multi-Band Complexity-Reduced Generalized-Memory-Polynomial Power-Amplifier Digital Predistortion]]>646176317743137<![CDATA[Developing Low-Cost <inline-formula> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula>-Band SIW Bandpass Filters Using the Commercially Available Printed-Circuit-Board Technology]]> -band substrate integrated waveguide (SIW) filters have been investigated by using the low-cost printed-circuit-board (PCB) technology. Two types of SIW bandpass filters including cascaded quadruplet (CQ) and cascaded triplet (CT) filters were studied. The coupling matrix theory has been used to synthesize initial geometries, and the aggressive space mapping (ASM) algorithm was adopted as fast and low computation cost optimization method for realizations of investigated filters. A fin-line SIW-WR10 waveguide transition was developed for experiments. As demonstrations, two -band prototypes having a 2.5% fractional bandwidth centered at 80 GHz were fabricated on a 0.508-mm-thick RO5880 substrate and measured by a vector network analyzer. Good agreement between simulated and measured results is obtained. This work demonstrates that high-performance -band planar filters can be realized by utilizing the low-cost commercial PCB technology, and some design rules are recommended.]]>646177517862364<![CDATA[Model-Based Vector-Fitting Method for Circuit Model Extraction of Coupled-Resonator Diplexers]]>646178717972917<![CDATA[An Integrated Filtering Antenna Array With High Selectivity and Harmonics Suppression]]> interfaces between the cascaded filter, power divider, and antenna in traditional RF front-ends are eliminated to achieve a highly integrated and compact structure. A novel resonator-based four-way out-of-phase filtering power divider is proposed and designed. It is coupled to the patch array, rendering a fourth-order filtering response. The coupling matrix of the resonator network is synthesized. The physical implementations of the resonators and their couplings are detailed. Compared to a traditional patch array, the integrated filtering array shows an improved bandwidth and frequency selectivity. In addition, the harmonic of the antenna array is suppressed due to the use of different types of resonators. To verify the concept, a filtering array at S-band is designed, prototyped, and tested. Good agreement between simulations and measurements has been achieved, demonstrating the integrated filtering antenna array has the merits of wide bandwidth, high frequency selectivity, harmonics suppression, stable antenna gain, and high polarization purity.]]>646179818051718<![CDATA[A Design of 3-dB Wideband Microstrip Power Divider With an Ultra-Wide Isolated Frequency Band]]> with the series connected resister and capacitor on the right side of the middle coupled line is adopted. The detailed derivation is proposed as well. In addition, this power divider is fabricated on the substrate Rogers RO4003C with a compact size of 15.19 mm mm.]]>646180618111555<![CDATA[A Planar Balanced Crossover]]> -parameters of a generic four-port balanced crossover have been analyzed. According to the -parameters, a four-port balanced crossover has been presented for the first time. The crossover consists of two microstrip ring-shaped circuits connected by four transmission-line sections and exhibits bisymmetry. Employing even-odd-mode analysis, design equations have been proposed and theoretically verified. For a special case where quarter-wavelength transmission-line sections are utilized, all of the impedances of transmission-line sections in the reduced circuits could be arbitrarily selected. Bandwidth analysis has been conducted to provide a guideline of determining these impedances. For verification, a 2.45-GHz balanced crossover which occupies an area of has been implemented and measured. The measured differential-mode return loss, isolation, and insertion loss at 2.45 GHz are 25.0, 20.8, and 0.86 dB, respectively. The measured bandwidths in the differential mode are 22.0%, 4.1%, and 5.6% for the 17-dB return loss, 20-dB isolation, and 1-dB insertion loss, respectively. Cross-mode -parameters are less than −31 dB at 2.45 GHz with −20-dB bandwidths of 13%. Bandwidths of 20-dB common-mode rejection are no less than 45.0%. The measured data agree with the full-wave simulated results and validate the proposed design.]]>646181218212353<![CDATA[A Broadband Integrated Class-J Power Amplifier in GaAs pHEMT Technology]]> . A procedure is developed for ideal transistor sizing where transistors are concurrently stabilized and sized to achieve the maximum power-added efficiency (PAE). A 3.5–7 GHz, 0.5-W class-J PA is implemented in a AlGaAs–InGaAs pHEMT technology to check the accuracy of the proposed approach. With chip dimensions of , the PA achieves 56% average PAE over the frequency band while maintaining an average 11-dB small-signal gain.]]>646182218301737<![CDATA[On Design of Wideband Compact-Size Ka/Q-Band High-Power Amplifiers]]> AlGaAs-InGaAs pseudomorphic HEMT (pHEMT) technology. With chip dimensions of , the HPA achieves 24% average power-added efficiency (PAE) over the frequency band, while maintaining an average 22-dB small-signal gain. A balanced high-power amplifier (BPA) is also presented, which combines the power of two 5-W HPA cells to deliver peak 8.5-W output power in the frequency band of 30–38 GHz. The BPA chip area is , and 21-dB average small-signal gain is obtained over the frequency band.]]>646183118423179<![CDATA[An Ultra-Low-Power Wideband Inductorless CMOS LNA With Tunable Active Shunt-Feedback]]> P8M CMOS technology and occupies only . The measured LNA has a 12.3-dB gain 4.9-dB minimum noise figure (NF) input referred third-order intercept point (IIP3) of −10 dBm and 0.1–-2.2 GHz bandwidth (BW), while consuming only 400 from a 1-V supply.]]>646184318531865<![CDATA[A 2-GHz Pulse Injection-Locked Rotary Traveling-Wave Oscillator]]> at 100-kHz offset from 2.039 GHz. It achieves 39-fs integrated root mean square (rms) jitter from 1 kHz to 40-MHz offset, for a (FOM) of .]]>646185418663835<![CDATA[A Novel Concurrent 22–29/57–64-GHz Dual-Band CMOS Step Attenuator With Low Phase Variations]]> BiCMOS technology. The measured insertion loss, root-mean-square (rms) amplitude error, and rms phase error are less than 7.9 dB, 0.55 dB, and 4.7° in the first passband of 22–29 GHz, respectively. In the second passband, 57–64 GHz, the measured insertion loss, rms amplitude error, and rms phase error are less than 11 dB, 1.5 dB, and 4.1°, respectively. The measured stopband rejections over the 16 states are greater than 28 and 31 dB at 12 and 36 GHz, respectively. The core chip size is .]]>646186718754902<![CDATA[Multiplexed Readout for 1000-Pixel Arrays of Microwave Kinetic Inductance Detectors]]> while reading 1000 carriers simultaneously, which scales linear with the number of carriers. We demonstrate that 4000 state-of-the-art aluminium-NbTiN MKIDs can be read out without deteriorating their intrinsic performance.]]>646187618831676<![CDATA[SAGD Process Monitoring in Heavy Oil Reservoir Using UWB Radar Techniques]]>646188418953080<![CDATA[High-Order Modulation Transmission Through Frequency Quadrupler Using Digital Predistortion]]> are achieved in different tests.]]>646189619104600<![CDATA[Advances in Ferrite Redundancy Switching for Ka-Band Receiver Applications]]>646191119172053<![CDATA[RF Energy Harvesting From Multi-Tone and Digitally Modulated Signals]]>646191819272473<![CDATA[Additively Manufactured Microfluidics-Based “Peel-and-Replace” RF Sensors for Wearable Applications]]> fluid volume to produce a 44% frequency shift between an empty () and a water-filled channel (), demonstrating a sensitivity that is higher than most previously reported microfluidics-based microwave sensors. Seven different fluids were used to measure the sensitivity of the prototype and an overall sensitivity of was observed. The “peel-and-replace” capability of the presented sensor not only facilitates the cleaning process for sensor reusability, but it also enables sensitivity tunability. For bent/conformed configurations, the sensor’s functionality is good even for a bending radius down to 7 mm, demonstrating its great flexibility. After bending multiple times, the sensor still exhibits a very good performance repeatability, which verifies its reusability feature. The introduced additively manufactured RF microfluidics-based sensor would be well suited for numerous wearable and conformal fluid sensing applications (e.g., bodily fluids-
analyzing and food monitoring), while it could also be utilized in a variety of microfluidics-reconfigurable microwave components.]]>646192819361432<![CDATA[Respiration Rate Measurement Under 1-D Body Motion Using Single Continuous-Wave Doppler Radar Vital Sign Detection System]]>646193719461943<![CDATA[A Photonic Approach to Linearly Chirped Microwave Waveform Generation With an Extended Temporal Duration]]>64619471953897<![CDATA[Corrections to “Synthesis of Multiport Networks Using Port Decomposition Technique and Its Applications”]]>[1], Fig. 4 is incorrect and should be replaced with the version published in this Letters.]]>64619541954193<![CDATA[Corrections to “A Multi-Frequency Multi-Standard Wideband Fractional-<inline-formula> <tex-math notation="LaTeX">$N$ </tex-math></inline-formula> PLL With Adaptive Phase-Noise Cancellation for Low-Power Short-Range Standards”]]>[1] the version of Fig. 12 that appears is incorrect. The correct version of the figure appears here, showing the phase-locked loop (PLL) output spectral of 1-Mb/s data rate, 250-kHz frequency-deviation Gaussian frequency shift keying (GFSK) modulated Bluetooth LE baseband signal.]]>64619551955166<![CDATA[Introducing IEEE Collabratec]]>646195619562156<![CDATA[IEEE Transactions on Microwave Theory and Techniques information for authors]]>646C3C3153