http://ieeexplore.ieee.org TOC Alert for Publication# 101 2008 February 06 22 6 c1 c1 1400 22 6 c2 c2 214 22 6 1 1 86 22 6 2 2 41 22 6 3 5 99 22 6 6 9 548 22 6 10 15 832 22 6 16 23 996 22 6 24 30 929 22 6 31 38 720 22 6 39 46 1672 22 6 47 52 593 2. The method of adding control transistors improved the static power dissipation. The transient power consumption of the charge pump circuit was greatly reduced by using a slowly varying clock. The proposed SA using a voltage sensing method also significantly improved the read power dissipation. By employing these techniques, a low-power embedded EEPROM memory with 40 muA read current and 250 muA page write current was developed, that achieved much lower power than EEPROM memory designs reported in scientific journals or conferences. This EEPROM memory was used in the ISO/IEC 15693-compatible RFID tag IC project]]> 22 6 53 59 1195 22 6 60 65 1052 22 6 66 74 4935 22 6 75 78 1356 22 6 79 86 3326 22 6 87 92 169 22 6 93 102 414 22 6 103 103 335 22 6 105 105 190 22 6 106 106 200