Enhanced thermoelectric properties of ZLAST by combinatorial sputtering approach

Summary form only given. The thin film ZLAST(Zn
_x
Pb
_y
Sb
_z
Ag
_m
Te
_n
) was studied by combinatorial approach. ZLAST thin films were co-deposited from a stoichiometric Ag, Sb, PbTe, and Zn
₄
Sb
₃
alloy target onto glass substrates using a custom designed radio-frequency (RF) magnetron sputtering system. The crystalline phase and variations in the composition of the thin films were determined using field emission scanning electron microscopy, field emission transmission electron microscopy, and energy dispersive spectroscopy. It was found that as x=0.01; y=0.02; z=0.88; m=0.03 and n=0.06, it was found that the lowest electrical resistivity and highest seebeck coefficient is about 0.17 mΩ-cm and 26.2 μV/K, respectively. The power factor of Zn
_0.01
Pb
_0.02
Sb
_0.88
Ag
_0.03
Te
_0.06
is 4.03 μw/K
²
cm, which is higher than LAST (0.73 μw/K
²
cm). Furthermore, the Seebeck coefficient and electrical resistivity properties with variation temperature were also investigated. The significant records of the thermoelectric properties are extremely important for the fundamental understanding of ZLAST thermoelectric composites.