Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

We have demonstrated the monolithic integration of an electroabsorption modulator with a laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at -3.5 V and 0 V, we achieve the laser output power of <; 1.5 mW to > 9 mW, respectively, leading to ~8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.