A new high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyze RTN has a typical time resolution of ~2ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2μs, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag method (W-LT) for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.