Capacitance-Voltage characterization and semiclassical transport analysis of InxGa1−xAs surface channel Quantum Well MOSFET

In this paper, the Capacitance-Voltage (C-V) and Ballistic Current characteristics of arsenide based surface channel Quantum Well (QW) MOSFET were investigated. Self-consistent simulation was performed by solving coupled Schrödinger-Poisson equation incorporating wave function penetration into oxide. Although Experimental C-V and I-V characteristics of the Surface Channel QW MOSFET are available in recent literature, a self-consistent simulation based C-V and I-V characterization is yet to be reported. We studied some important parameters variation like oxide material, doping concentration and their impacts on C-V characteristics. We have also simulated carrier transport in the Ballistic limit using top of the barrier approach.