Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory

Anisotropic Inter-Poly Dielectric (AIS IPD) has been successfully developed. It enables center SiN thickness to be thicker at Floating-Gate (FG) top and thinner at FG side. Using AIS IPD, both programming speed and program saturation threshold voltage improve without reliability degradation even if the IPD physical thickness at FG side is about 2nm thinner than conventional IPD. Therefore, AIS IPD is one of the key technologies for BL pitch scaling in conventional FG type flash memory.