Performance improvement of silicon micro-cavity modulators by iteration of the p-i-n intrinsic region width

The distance between the p
⁺
- and n
⁺
-doped regions of the p-i-n diode in micro-cavity modulators represents a compromise between speed and loss. We varied the intrinsic region width to determine the influence on the modulator properties through simulations and experiments. A width of 0.7 μm was found to be the optimal value for modulation operation.