Fluorene-type thin films synthesized under biphenyl and ethylene RF plasma

The mixture of biphenyl (C
₁₂
H
₁₀
) and ethylene (C
₂
H
₄
) plasma was used to synthesize fluorene (C
₁₃
H
₁₀
)-type films by a 13.56 MHz capacitive coupled RF plasma system. The thin films were deposited on glass slides. Changes of layers were investigated when a negative bias potential was applied to the holder of the substrate. The chemical environment was explored by residual gas analysis (RGA) mass spectrometry. Deposited layers were investigated by UV-visible spectroscopy, Atomic Force Microscope (AFM) and ellipsometry. The thin films were doped with Iodine (I
₂
) for different time periods.