50–100 MHz, 8x step-up DC-DC converters in 130nm 1.2V digital CMOS

This paper reports the implementation of high voltage step-up converters in standard 130nm 1.2V CMOS technology. Two hybrid boost converters have been fabricated and are compared, each of which are enabled by the development of enhanced high voltage devices for the standard process: Schottky diodes and stacked NMOS switches. Each device can sustain blocking voltages near 10V or greater in the 1.2V process. The two hybrid boost converters both operate at 50-100MHz switching frequency with 1.2 to 10V conversion. The switched inductor/capacitor hybrid converter delivers 26mW maximum power and achieves 42% peak efficiency at 7V output, while the switched inductor/flyback converter delivers 66mW maximum power and achieves 57% peak efficiency at 7V output.