Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

An extremely low contact resistivity of $\hbox{6} {-} \hbox{7} \times \hbox{10}^{-9}\ \Omega\cdot\hbox{cm}^{2}$ between $ \hbox{Ni}_{0.9}\hbox{Pt}_{0.1}\hbox{Si}$ and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in $IV$ characteristics.