Semiconductor laser modeling with ANFIS

In this study, neuro-fuzzy (NF) models are used which are well-known robust learning systems that combine the advantages of fuzzy sets and neuro-computation theory. Particularly, a single model based on the adaptive network-based fuzzy inference system (ANFIS) is successfully developed from the amplified spontaneous emission (ASE) spectra of a semiconductor laser diode in order to obtain the critical quantities and their dependences on wavelength and currents. These critical quantities are the differential gain, the induced effective index change and the linewidth enhancement factor (α parameter). The comparison of single model results and the experimental measurements validate the presented approach.