Extraction of the Effective Mobility of $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

The extraction of the effective mobility on In
_0.53
Ga
_0.47
As metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied and shown to be greater than 3600 cm
²
/V middots. The removal of
C

_it
response in the split
C
-
V
measurement of these devices is crucial to the accurate analysis of these devices. Low-temperature split
C
-
V
can be used to freeze out the
D

_it
response to the ac signal but maintain its effect on the free carrier density through the substrate potential. Simulations that match this low-temperature data can then be ldquowarmed uprdquo to room temperature and an accurate measure of
Q

_inv
is achieved. These results confirm the fundamental performance advantages of In
_0.53
Ga
_0.47
As MOSFETs.