Threshold-Voltage Modeling of Body-Tied FinFETs (Bulk FinFETs)

The threshold voltages V
_th
of the body-tied double/triple-gate MOSFETs (bulk FinFETs) implemented on bulk silicon (Si) wafers were modeled systematically and compared with data obtained from 3-D device simulation. The threshold-voltage behaviors of the bulk FinFETs were modeled, for the first time, based on charge sharing. For the simplified V
_th
model, we considered not only short-channel effect (SCE) and narrow-width effect but also 3-D charge sharing at the corner. Only one fitting parameter is introduced to reflect the SCE in the fin body. The model predicted the V
_th
behavior with fin body thickness, body doping concentration, gate height, gate length, and corner shape of the fin body well. Our compact model makes an accurate prediction of V
_th
and shows good agreement with 3-D simulation data