An investigation of the structural and thermal transfer characteristics of commercial power MOSFET devices using experimental and modelling techniques

This paper presents the results of an investigation into the structural and electrothermal properties of a group of commercial power MOSFET devices. Variations between devices of the same type designation were examined using electrothermal measurements, microscopic analysis and mathematical simulation techniques. Transient electrical measurements demonstrate significant differences in the semiconductor die temperature, supported by observed variations in structure and thermal modelling results.