Unified regional fermi-potential-based compact model for double heterostructure HEMTs

Triangular quantum-well (QW) based high electron mobility transistors (HEMTs) and their compact models have been extensively studied in the past. InGaAs-based double heterostructure HEMTs with rectangular-QW confinement are garnering much interest recently. The coupled Poisson-Schrödinger (PS) studies show that triangular-QW compact models are inconsistent with the double heterostructure physics. This paper presents a complete physics-based unified regional Fermi-potential (E
f
) model for rectangular QW devices. The E
f
along with the derived interface potential solution (E
if
) are used to capture the complete device electrostatics. The paper also discusses the modeling of I
d
–V
d
and I
d
–V
g
characteristics of the device from the Fermi potential.